Research Initiation Award: A Novel Dual Laser Deposition Process to Facilitate the Fabrication of Planar Waveguide Lasers

研究启动奖：一种促进平面波导激光器制造的新型双激光沉积工艺

• 批准号: 9309498
• 负责人: Sarath Witanachchi
• 金额: $ 10万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-08-15 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9309498&HistoricalAwards=false
• 关键词: Research; Initiation; Award; Novel; Dual

WPC 2 $ B P Z $ Courier 10cpi #| x Õm x 6 X @ 8 ; X @ HP LaserJet Series II HPLASEII.PRS x @ , t 0 OpX @Courier 10cpi Line Printer 16.67cpi 2 X V F ` ? x x x , Õm x 6 X @ 8 ; X @ k + H H H , H H @ ; @ = t t ; ! u t. t 3 y r = u u t1 , ! Q * ! ı Y 9309498 Witanachchi A novel dual laser ablation deposition of technique is proposed for the growth of optical films, towards the fabrication of low loss waveguide lasers. The proposed vapor phase deposition technique will facilitate the formation of epitaxial ND:YAG films on GaAs substrates, that would lead to the integrated opto electronic elements, such as diode pumped blue green lasers and amplifiers. The two lasers employed for the deposition process, a long pulse (100ns 1us) ? CO 2 laser and a short pulse (15ns) excimer laser, will interact with the target of the material to be deposited, and subsequently, with the laser generated plasma is obtained, complete evaporation of the microscopic particulates in the plume leading to the formation of a defect free films is expected. Extensive optical and ion probe diagnostics of the laser generated plasma plume will be performed to aid the optimization of the particulate free film growth process, and provide a fundamental understanding of the dual laser ablation technique.

WPC 2美元 B P Z $ 10 cpi #|X m x 6 X @ 8 ; X @ HP LaserJet Series II HPLASEII.PRS X @ , t 0 OpX @Courier 10 cpi行式打印机16.67cpi 2 X V F ` ? x x x， m x 6 X @ 8 ; X @ k + H H H， H H @ ; @ = t 不 ; ! u t. 不 3 y R = u u t1，！ Q *！ ı Y 9309498 Witanachchi提出了一种新的双激光烧蚀沉积技术，用于光学薄膜的生长，以制造低损耗波导激光器。气相沉积技术将有助于在GaAs衬底上外延生长Nd：YAG薄膜，从而实现集成光电器件，如二极管泵浦的蓝绿色激光器和放大器。 用于沉积过程的两个激光器，长脉冲（100 ns 1us） ? CO 2 激光器和短脉冲（15 ns）准分子激光器将与待沉积材料的靶相互作用，并且随后，通过获得激光产生的等离子体，期望羽流中的微观颗粒完全蒸发，从而形成无缺陷膜。 广泛的光学和离子探针诊断的激光产生的等离子体羽流将被执行，以帮助无微粒薄膜生长过程的优化，并提供了一个基本的理解双激光烧蚀技术。