Research Initiation Award: A Novel Dual Laser Deposition Process to Facilitate the Fabrication of Planar Waveguide Lasers

WPC 2$B P Z$Courier 10cpi#|x？m x 6 X@8；X@HP LaserJet Series II HPLASEii prs x@，t 0 OPX@Courier 10cpi行式打印机16.67cpi 2 X V F`？X，m x 6X@8；X@k+H，H H@；@=t t；！T 3 y r=u u T1，！Q*！ıY 9309498 Witanachchi提出了一种新的双激光烧蚀沉积技术，用于生长光学薄膜，以制造低损耗的波导激光器。所提出的气相沉积技术将有助于在GaAs衬底上形成外延的NdYAG膜，这将导致集成的光电子元件，如二极管泵浦的蓝绿激光器和放大器。用于沉积过程的两个激光，一个长脉冲(100 Ns 1us)？CO2激光和短脉冲(15 Ns)准分子激光将与被沉积材料的靶相互作用，随后在激光产生的等离子体中，羽流中的微观颗粒被完全蒸发，从而形成无缺陷的薄膜。将对激光产生的等离子体羽流进行广泛的光学和离子探针诊断，以帮助优化无颗粒薄膜生长过程，并提供对双激光烧蚀技术的基本理解。

WPC 2 $ B P Z $ Courier 10cpi #| x Õm x 6 X @ 8 ; X @ HP LaserJet Series II HPLASEII.PRS x @ , t 0 OpX @Courier 10cpi Line Printer 16.67cpi 2 X V F ` ? x x x , Õm x 6 X @ 8 ; X @ k + H H H , H H @ ; @ = t t ; ! u t. t 3 y r = u u t1 , ! Q * ! ı Y 9309498 Witanachchi A novel dual laser ablation deposition of technique is proposed for the growth of optical films, towards the fabrication of low loss waveguide lasers. The proposed vapor phase deposition technique will facilitate the formation of epitaxial ND:YAG films on GaAs substrates, that would lead to the integrated opto electronic elements, such as diode pumped blue green lasers and amplifiers. The two lasers employed for the deposition process, a long pulse (100ns 1us) ? CO 2 laser and a short pulse (15ns) excimer laser, will interact with the target of the material to be deposited, and subsequently, with the laser generated plasma is obtained, complete evaporation of the microscopic particulates in the plume leading to the formation of a defect free films is expected. Extensive optical and ion probe diagnostics of the laser generated plasma plume will be performed to aid the optimization of the particulate free film growth process, and provide a fundamental understanding of the dual laser ablation technique.