ROW: Processing/Property Relationships in Porous Silicon Sensors for Microelectronics

9225134 Osgood将对特定II-VI化合物半导体的光增强MOCVD（或MOMBE）外延中重要的基本表面化学机制进行研究。该研究将利用飞行时间质谱和全内反射红外光谱以及各种标准的特高压表面探针来确定II-VI表面上光诱导反应的未知机制。此外，将测量反应截面、产率和产物，在这些测量过程中，将考虑适当制备原子清洁表面的技术。研究的主要表面是ZnSe和CdTe表面。该研究有望深入了解引发反应的过程，并指导II-VI材料外延的光源波长、前体分子和一般生长条件的选择。这项研究有望对表面光辅助化学及其与化合物半导体材料光辅助外延的关系提供更深入的基础理解。从应用的角度来看，该结果将为在MOCVD外延室中使用激光和其他光源进行图像化提供指导，并将对II-VI光电子技术的总体进步具有重要意义，从而改善用于计算，信息处理和电信的先进设备和集成电路的性能。* * *

9225134 Osgood Investigations of fundamental surface-chemical mechanisms important in light-enhanced MOCVD (or MOMBE) epitaxy of specific II-VI compound semiconductors will be conducted. The research will utilize time-of-flight mass spectroscopy and total-internal-reflection infrared spectroscopy as well as a variety of standard UHV surface probes to determine the as-yet-unknown mechanisms for photo-induced reactions on II-VI surfaces. In addition, reaction cross-sections, yields, and products will be measured, and in the course of these measurements, consideration will be given to techniques for proper preparation of atomically clean surfaces. The primary surfaces for study will be those on ZnSe and CdTe. The study is expected to give insight into the processes initiating reactions and to guide selection of light-source wavelengths, precursor molecules, and general growth conditions for epitaxy of II-VI materials. %%% This research is expected to provide deeper fundamental understanding of photo-assisted chemistry on surfaces and its relation to photo-assisted epitaxy of compound semiconductor materials. From an application point of view, the results will provide guidance for the use of lasers and other light sources to do patterning in an MOCVD epitaxy chamber, and will be important to the general advancement in the technology of II-VI optoelectronics leading to improvements in the performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***