Analysis, Modeling and On-Line Control of Advanced Semiconductor Plasma Etching Reactors

先进半导体等离子体蚀刻反应器的分析、建模和在线控制

• 批准号: 9313320
• 负责人: Edward Whittaker
• 金额: $ 23.99万
• 依托单位: Stevens Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-05-15 至 1997-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9313320&HistoricalAwards=false
• 关键词: Analysis; Modeling; Line; Control; Advanced

Whittaker 9313320 The award is for establishing a comprehensive research program in chemical analysis and chemical modeling of plasma etching reactors for semiconductor circuit manufacturing. The chemical analysis and modeling will be performed using chemically selective diagnostic data obtained by a very sensitive implementation of an infra-red diode laser absorption spectroscopy. The modeling will have the goal of establishing a new and predictive level of understanding of the plasma etch chemistry. The work is expected to have a direct impact on semiconductor electronics and manufacturing technology. The availability of the diagnostic data will help in the formulation of predictive models needed for improved etch process design and control, especially in the processing of submicron features.

Whittaker 9313320 该奖项是为了建立一个全面的研究计划，在化学分析和化学建模的等离子体蚀刻反应器的半导体电路制造。 化学分析和建模将使用通过非常灵敏的红外二极管激光吸收光谱法获得的化学选择性诊断数据进行。 建模的目标是建立一个新的和预测水平的理解等离子体蚀刻化学。 这项工作预计将对半导体电子和制造技术产生直接影响。 诊断数据的可用性将有助于改进蚀刻工艺设计和控制所需的预测模型的制定，特别是在亚微米特征的处理中。