U.S.-France Cooperative Research: Material Aspects of Silicon Carbide (SiC) Metallization

美法合作研究：碳化硅 (SiC) 金属化的材料方面

• 批准号: 9313955
• 负责人: Marc-A Nicolet
• 金额: $ 1.48万
• 依托单位: California Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-05-01 至 1998-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9313955&HistoricalAwards=false
• 关键词: U.S.; France; Cooperative; Research; Material

9313955 Nicolet Three-year award supports U.S.-France cooperative research in electronic materials between Marc A.-Nicolet of the California Institute of Technology and Roland Madar of the Ecole Normale Superieure de Genie Physique in Grenoble, France. The objective of their research is to study the reactions and reaction prodects between silicon carbide (SiC) and metals. They will focus on reactions between a selection of thin transition metal films and SiC. The U.S. investigator brings to this collaboration expertise in the development of stable metal/semiconductor contacts emphasizing silicon and gallium arsenide. This is complemented by French expertise in the synthesis of mono-and polycrystalline refractory materials, especially metal silicides. Silicon carbide is an attractive material for high temperature, high power and high frequency electronic devices. It is also used in fiber-reinforced metal-matrix composites. It is the most promising material for high-power and high-temperature diodes and transistors. This project will advance understanding of these materials and provide the basis for design of silicon carbide devices. ***

9313955尼科莱三年奖支持美国-法国合作研究电子材料马克A.-加州理工学院的尼科莱和法国格勒诺布尔的精灵体质师范学校的罗兰马达。 他们的研究目的是研究碳化硅（SiC）与金属之间的反应和反应产物。 他们将重点关注精选的过渡金属薄膜与SiC之间的反应。 这位美国研究员为这次合作带来了开发稳定金属/半导体接触的专业知识，重点是硅和砷化镓。 此外，法国在合成单晶和多晶耐火材料，特别是金属硅化物方面的专业知识也起到了补充作用。 碳化硅是一种具有吸引力的高温、大功率和高频电子器件材料。 它也用于纤维增强金属基复合材料。 它是最有前途的高功率和高温二极管和晶体管的材料。 本项目将促进对这些材料的理解，并为碳化硅器件的设计提供依据。 ***