U.S.-France Cooperative Research: Material Aspects of Silicon Carbide (SiC) Metallization

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9313955 Nicolet Three-year award supports U.S.-France cooperative research in electronic materials between Marc A.-Nicolet of the California Institute of Technology and Roland Madar of the Ecole Normale Superieure de Genie Physique in Grenoble, France. The objective of their research is to study the reactions and reaction prodects between silicon carbide (SiC) and metals. They will focus on reactions between a selection of thin transition metal films and SiC. The U.S. investigator brings to this collaboration expertise in the development of stable metal/semiconductor contacts emphasizing silicon and gallium arsenide. This is complemented by French expertise in the synthesis of mono-and polycrystalline refractory materials, especially metal silicides. Silicon carbide is an attractive material for high temperature, high power and high frequency electronic devices. It is also used in fiber-reinforced metal-matrix composites. It is the most promising material for high-power and high-temperature diodes and transistors. This project will advance understanding of these materials and provide the basis for design of silicon carbide devices. ***