Luttinger Liquid and Chaotic Transport in Wet-etched Ballistic Gallium Arsenide-Aluminum Gallium Arsenide Transistors with Multiple Gates

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9405469 Washburn The Principal Investigator will employ interlaced or overlapping gates to govern transmission of carriers into and out of tailored cavities etched into ballistic heterostructures to study a new quantum transport effects. The two main targets of the research are (1) Luttinger correlations among carriers in wires at low carrier density and high magnetic field and (2) chaotic response from specially designed cavities. In both cases gates will cover the entire device to aid in screening by the electrostatic potentials and to allow control over carrier concentration. Separate gates will control transmission coefficients in the probes feeding and sensing the wires and cavities. This will allow, for the first time, individual control over these two critical parameters, which in turn will allow more detailed exploration of these two new areas of transport physics. % % % % The Principal Investigator build new kinds of ballistic electrical devices where the electrons travel in perfect, disorder-free crystals and collide only with features created by the architects of the devices. The devices will allow more complete control of the electrical parameters than has been attempted before. The devices will be used to understand two newly discovered electronic effects of current and fundamental interest to the physics community. The first is a subtle way in which electrons repel each other in the midst of a sea of electrons that is confined so that the electrons cannot easily escape the repulsive forces. The second is the chaotic motion of electrons in situations where irregular orbits are possible. ***