Quantum Transport in Silicon/Silicon-Germanium Nanostructures

9321557沃什伯恩技术摘要：这个探索性研究的小资助金项目是对硅-锗合金中新的纳米结构的研究。这些结构包括小点接触、横向共振隧穿器件和干涉仪。将制造三种器件：(1)裂栅和浅蚀刻点接触和弹道导线，(2)干涉仪，(3)复合栅极、横向、一维共振隧穿结构和干涉仪。这些实验将把量子干涉的研究扩展到一种新的材料系统，并提供第一个受控系统来测试最近对一维Luttinger液体中电导量子化的预测。非技术摘要：新的电子设备依赖于越来越小的物理结构，即所谓的纳米结构。一种很有前途的纳米结构材料是砷化镓。然而，它的制造成本比传统的硅更高。这个探索性研究的小额赠款项目是一个大学-工业(IBM)合作项目，将探索由硅-锗合金制成的纳米结构。后一种材料可以用传统的硅工艺制造。这项研究将探索这些材料的物理性质，并确定它们的量子电子性质，以评估它们作为器件材料的潜力。***

9321557 Washburn Technical abstract: This Small Grants for Exploratory Research project is a study of new nanostructures in silicon-germanium alloys. The structures include small point contacts, lateral resonant tunneling devices and interferometers. Three kinds of devices will be fabricated: (1) split-gate and shallow etched point contacts and ballistic wires, (2) interferometers, and (3) compound gate, lateral, one-dimensional resonant tunneling structures and interferometers. The experiments will extend the study of quantum interference to a new materials system and provide the first controlled system for testing recent predictions of conductance quantization in a one-dimensional Luttinger liquid. Non-technical abstract: New electronic devices depend on increasingly smaller physical structures, so-called nanostructures. One promising nanostructure material is gallium arsenide. However, it is more expensive to fabricate than traditional silicon. This Small Grants for Exploratory Research project is a university- industry (IBM) collaboration which will explore nanostructures made from silicon-germanium alloys. The latter material can be fabricated by traditional silicon technology. The research will explore the physics of these materials and determine their quantum electronic properties in order to assess their potential as device materials. ***