Development of a Device for the Simultaneous Application of Uniaxial Stress and Hydrostatic Pressure

同时施加单轴应力和静水压力的装置的研制

• 批准号: 9406319
• 负责人: Hans Hochheimer
• 金额: $ 10.2万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-07-15 至 1996-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9406319&HistoricalAwards=false
• 关键词: Development; Device; Simultaneous; Application; Uniaxial

Funds are provided for development of a unique device for the simultaneous application of uniaxial stress and hydrostatic pressure to semiconductor and high-temperature superconductors. Using the Boundary Element Method, the device is calculated to withstand 1.4 GPa hydrostatic pressure and 1 GPa uniaxial stress with a safety factor of 1.5. High-pressure experiments are important for the study of high-temperature superconductors, and for the testing of theoretical models to acquire clues for the improvement of the compounds. The application of an external stress to a semiconductor is also significant due to the modification of the band structure. Currently, enormous effort is being expended in order to engineer the band structure of semiconductors for improved electronic and optoelectronic devices. The device to be developed in this work will be used in the investigation of laser diodes owing to the commercial importance of this area.

提供资金用于开发一种独特的装置，用于同时对半导体和高温超导体施加单轴应力和静水压力。使用边界元法，该设备计算承受1.4 GPa的静水压力和1 GPa的单轴应力与安全系数为1.5。高压实验对于高温超导体的研究和理论模型的测试都很重要，可以为化合物的改进提供线索。由于能带结构的改变，对半导体施加外部应力也是重要的。目前，人们正在花费巨大的努力来设计半导体的能带结构，以改进电子和光电器件。在这项工作中开发的设备将用于激光二极管的调查，由于这一领域的商业重要性。