RESEARCH INITIATION AWARD: Improved Adhesion and Selective Area Deposition of Metal Films on Ceramics for Microelectronics

高密度微电子电路的经济制造取决于两个关键因素：细间距电气互连的制造和通过集成加工步骤降低成本。这两个问题都是通过使用紫外线来定义电路模式来解决的。新工艺利用紫外准分子激光局部分解AIN和A12O3表面，形成高分辨率金属线，用于无需光刻加工的薄膜增材沉积。激光辅助化学气相沉积（CVD）由二甲基氢化铝通过激光束直接写入产生图案种子层。采用选择性面积热气相沉积法在分解区和播种区生长薄膜。在实践中，由于油墨中的玻璃相氧化基材时形成的氮泡，厚膜在AIN上的附着力很差。通过丝网印刷在分解区域上提高厚膜密度，使金属化表面被氧化而不使膜起泡。金属化过孔是通过激光烧蚀衬底和可拆卸的金属衬底来制造的。薄膜、过孔和激光修饰表面的电学性能与化学分析结果和显微结构发育评价相关。＊＊＊

9410224 Lumpp Economical manufacturing of high density microelectronic circuits depends on two critical factors: fabrication of fine pitch electrical interconnections and cost reduction by integration of processing steps. Both of these issues are addressed by using ultraviolet light to define circuit patterns. The new procedures utilize ultraviolet excimer lasers to locally decompose AIN and A12O3 surfaces to pattern high resolution metal lines for additive deposition of films without photolithography processing. Laser assisted chemical vapor deposition (CVD) from dimethylaluminum hydride produces a patterned seed layer by direct writing with the laser beam. Thin films are grown by selective area thermal CVD on the decomposed and seeded regions. In practice, adhesion of thick films on AIN has been poor due to nitrogen bubbles formed when the glass phase in the ink oxidizes the substrate. Thick film density is improved by screen printing onto decomposed regions so that the metallized surface is oxidized without blistering the film. Metallized vias are fabricated by laser ablation of the substrate and a detachable metal backing. Electrical properties of films, vias and laser modified surfaces are correlated with chemical analysis results and evaluation of microstructural development. ***