Acquisition of a High Performance Secondary Ion Mass Spectrometer: A Cameca IMS-6F

购置高性能二次离子质谱仪：Cameca IMS-6F

• 批准号: 9413421
• 负责人: Robert Davis
• 金额: $ 68.82万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9413421&HistoricalAwards=false
• 关键词: Acquisition; Performance; Secondary; Ion; Mass

A Cameca IMS-6F Secondary Ion Mass Spectrometer (SIMS) and associated peripheral equipment will be acquired with funds from the Academic Research Program. This new SIMS will replace a Cameca IMS-3F SIMS which has been used for more than a decade, but is no longer a state-or-the-art facility that meets all the needs of the adjacent user committee. The new SIMS model will give greatly enhanced sensitivity, will provide much better spatial/depth resolution for depth profiling, and will provide improved sample charging compensation. The new equipment will make possible for the first time the analysis and detection of carbon and oxygen negative ions. The facility will be used in research projects involving: 1) thin film deposition and processing, 2) surface preparation technology for microelectronic processing, 3) fabrication and measurement of shallow junctions, 4) SIMS analytical technique and instrumentation development involving automated sample charge neutralization control, high spatial resolution SIMS imaging and digital control of depth profiling parameters. A secondary ion mass spectrometer (SIMS) with state-of-the-art sensitivity, sample charging compensation, and spatial/depth resolution for depth profiling will be acquired to replace an older spectrometer that is no longer has state-of-the-art capabilities. The new spectrometer will be used for thin film deposition and processing, surface preparation technology for microelectronic processing, fabrication of shallow junction devices and the development of new SIMS system capabilities.

Cameca IMS-6F次级离子质谱仪（SIMS）和相关外围设备将获得学术研究计划的资金。这种新的SIMS将取代Cameca IMS-3F SIMS，该SIMS已经使用了十多年，但不再是满足邻近用户委员会所有需求的最先进的设施。新的SIMS模型将大大提高灵敏度，将为深度剖面提供更好的空间/深度分辨率，并将提供改进的样品充电补偿。新设备将首次使碳和氧负离子的分析和检测成为可能。该设施将用于以下研究项目：1)薄膜沉积和加工，2)微电子处理的表面制备技术，3)浅结的制造和测量，4)SIMS分析技术和仪器开发，包括自动样品电荷中和控制，高空间分辨率SIMS成像和深度剖面参数的数字控制。将获得具有最先进灵敏度、样品充电补偿和深度剖面空间/深度分辨率的二次离子质谱仪（SIMS），以取代不再具有最先进能力的旧光谱仪。新的光谱仪将用于薄膜沉积和加工，微电子加工的表面制备技术，浅结器件的制造以及新的SIMS系统能力的开发。