Atomic-Scale Mechanism of Metal Etching Reactions Determined by High-Speed Variable-Temperature Scanning Tunneling Microscopy

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94114404 Altman The mechanism of metal etching reactions will be studied using high speed variable temperature STM along with macroscopic surface analysis techniques. The project will focus on halogen etching of copper because of interest in using copper as an interconnect material in integrated circuits. The study will concentrate on the two major reaction steps in halogen etching of copper: 1)copper halide formation and 2)halide removal by sublimation and/or reaction. The factors that limit etching rates will be directly determined through STM "movies" monitoring the surface under etching conditions. A mechanistic kinetic model based on the elementary reaction steps observed with STM will be developed. The results will guide development of new etching processes and new etching schemes to directly pattern fine metal lines. %%% This research is anticipated to provide an atomic-level understanding of etching reactions that are an important step in integrated circuit fabrication. This understanding will aid development of new etching processes to allow new materials to be used in integrated circuits. The use of new materials will be required to continue the trend of increased device speed and decreased device size into the next century. The results of this research will have an impact on the fabrication and general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***