Kagome metals: From Japanese basket to next generation electronic devices

该项目旨在研究一种非常有前途的电子设备新材料，它可以比现在的硅基技术运行得更快，更节能。Kagome金属具有非平凡的拓扑性质，可以无电阻地通过电流，使其成为下一代电子设备的理想选择。该项目旨在在超薄层中种植Kagome金属，以实现这一潜力，制造设备并研究其电子特性。该项目的预期成果将包括展示Kagome金属可以构成超低能量电子设备的基础，以及未来在高温容错量子计算中的应用。

This project aims to investigate a new material that is very promising for electronic devices that can operate faster, and be more energy efficient than today’s silicon-based technology. Kagome metals have topological non-trivial nature and can pass current without resistance, making them ideal for next-generation electronic devices. This project aims to grow Kagome metals in the ultra-thin layers needed to realise this potential, make devices and study their electronic properties. Expected outcomes of the project will include showing Kagome metals can form the basis of ultra-low energy electronic devices, as well as having future applications in high-temperature fault-tolerant quantum computing.