Research Equipment Grant: Titanium Sapphire Laser System

研究设备补助金:钛蓝宝石激光系统

基本信息

  • 批准号:
    9500011
  • 负责人:
  • 金额:
    $ 4.41万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    1995
  • 资助国家:
    美国
  • 起止时间:
    1995-04-15 至 1996-03-31
  • 项目状态:
    已结题

项目摘要

9500011 Hall The Department of Electrical Engineering at the University of Notre Dame will use the requested funds to purchase a tunable Titanium:Sapphire laser, Argon ion pump laser, and closed loop heat exchanger for pump laser water cooling. The equipment will provide the necessary capabilities for the complete development and characterization of new integrated optoelectronics devices and integrated circuits (OEICs). These structures will be fabricated using a new oxidation technology for aluminum-bearing alloy semiconductors (the "native" oxide of aluminum-gallium-arsenide (A1GaAs)). The planar waveguide lenses, buried strip waveguides, and integrated laser sources to be developed will be useful "building block" components broadly applicable in the further evolution of OEICs. These components will be applied for the realization of novel and higher-performance integrated master oscillator power amplifier (MOPA) devices. As compact and efdicient semiconductor laser sources, MOPA devices have enormous demonstrated potential for generating high-power (5 W), highly- coherent radiation, and strongly merit further research. The new A1GaAs native oxide will also be investigated as a potential new host material for rare-earth ions, promising a novel approach for incorporating the dopants into III-V semiconductors to obtain monolithically-integrated, optically-pumped, spectrally sharp, temperature-insensitive luminescence sources with new properties and wavelengths. ***
9500011大厅圣母大学电气工程系将使用申请的资金购买可调谐钛:蓝宝石激光器,氩离子泵激光器和闭环热交换器泵激光器水冷却。 该设备将为新的集成光电子器件和集成电路(OEIC)的完整开发和表征提供必要的能力。 这些结构将使用一种新的含铝合金半导体氧化技术(砷化铝镓(A1 GaAs)的“天然”氧化物)制造。 平面波导透镜、掩埋条形波导和集成激光源将成为OEIC进一步发展的有用“积木”元件。 这些元件将用于实现新型、更高性能的集成主振荡器功率放大器(MOPA)设备。 MOPA器件作为一种紧凑高效的半导体激光光源,在产生高功率(5 W)、高相干辐射方面具有巨大的潜力,值得进一步研究。 新的A1 GaAs原生氧化物也将被研究作为一种潜在的新的稀土离子主体材料,有望将掺杂剂纳入III-V族半导体的新方法,以获得单片集成,光泵,光谱尖锐,温度不敏感的发光源,具有新的性能和波长。 ***

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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Douglas Hall其他文献

PO-01-117 FIRST EVIDENCE OF ICD RESET DUE TO STEREOTACTIC ARRHYTHMIA RADIOTHERAPY (STAR) TO A DIPOLE LEAD
PO-01-117 立体定向心律失常放射治疗(STAR)导致双极导联 ICD 重置的首次证据
  • DOI:
    10.1016/j.hrthm.2025.03.376
  • 发表时间:
    2025-04-01
  • 期刊:
  • 影响因子:
    5.700
  • 作者:
    Douglas Hall;Gerard Walls;Nels Knutson;Thomas Mazur;Michael Prusator;Geoffrey Hugo;Pamela Samson;Daniel H. Cooper;Phillip Cuculich;Cliff Robinson
  • 通讯作者:
    Cliff Robinson
Photoperiodic control of reproduction in the male lizardAnolis carolinensis
PO-06-058 DOES CARDIAC RADIOABLATION ADVERSELY AFFECT ICD LEADS AND GENERATORS? A LONGITUDINAL DOSE-RESPONSE ANALYSIS
PO-06-058 心脏射频消融是否对 ICD 导线和发生器产生不良影响?一项纵向剂量反应分析
  • DOI:
    10.1016/j.hrthm.2024.03.1684
  • 发表时间:
    2024-05-01
  • 期刊:
  • 影响因子:
    5.700
  • 作者:
    Douglas Hall;Gerard Walls;Kaitlin Moore;Geoffrey Hugo;Cliff Robinson;Phillip Cuculich;Nels Knutson
  • 通讯作者:
    Nels Knutson
PO-05-028 strongEVOLUTION IN SIGNIFICANT TRICUSPID REGURGITATION AFTER LEADLESS PACEMAKER IMPLANTATION/strong
PO-05-028 无导线起搏器植入后严重三尖瓣反流显著进化/强
  • DOI:
    10.1016/j.hrthm.2023.03.1469
  • 发表时间:
    2023-05-01
  • 期刊:
  • 影响因子:
    5.700
  • 作者:
    Douglas Hall;Marye J. Gleva;Andrew J. Krainik;Karthik Ramaswamy;Sandeep S. Sodhi;Curtis M. Steyers;Rugheed Ghadban
  • 通讯作者:
    Rugheed Ghadban

Douglas Hall的其他文献

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{{ truncateString('Douglas Hall', 18)}}的其他基金

PFI-TT: Reliable High-Power Circular-Beam Semiconductor Lasers
PFI-TT:可靠的高功率圆形光束半导体激光器
  • 批准号:
    2329845
  • 财政年份:
    2023
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Continuing Grant
A new method for fabricating low-cost, high-performance waveguides, lasers and modulators in photonic integrated circuits for optical communication networks
一种在光通信网络光子集成电路中制造低成本、高性能波导、激光器和调制器的新方法
  • 批准号:
    1408456
  • 财政年份:
    2014
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Standard Grant
Oxidation of Aluminum-free Compound Semiconductors for Electronic and Optoelectronic Devices
用于电子和光电器件的无铝化合物半导体的氧化
  • 批准号:
    0925919
  • 财政年份:
    2009
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Continuing Grant
Vertical Intra-Cavity Pumped Erbium-Doped Waveguide Amplifier on GaAs
GaAs 上的垂直内腔泵浦掺铒波导放大器
  • 批准号:
    0824187
  • 财政年份:
    2008
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Standard Grant
High-Index-Contrast Waveguides for Enhanced Optoelectronic Devices and Integration
用于增强型光电器件和集成的高折射率对比度波导
  • 批准号:
    0601702
  • 财政年份:
    2006
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Standard Grant
Ultra-High-Capacity Optical Communications and Networking: Advanced GaAs-based Waveguide Integration for 1.3/1.55 micron Wavelength Division Multiplexing
超高容量光通信和网络:用于 1.3/1.55​​ 微米波分复用的先进 GaAs 波导集成
  • 批准号:
    0123501
  • 财政年份:
    2001
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Continuing Grant
CAREER: Compound-Semiconductor Oxides for Integrated Optoelectronics
职业:用于集成光电器件的化合物半导体氧化物
  • 批准号:
    9502705
  • 财政年份:
    1995
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Standard Grant
MIE: Opening Doors to Careers in Science, Engineering and Math
MIE:打开科学、工程和数学职业的大门
  • 批准号:
    9354124
  • 财政年份:
    1994
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Standard Grant
UBVRI Photometry of Starspots in RS CVn Binaries with Automatic Photoelectric Telescopes
使用自动光电望远镜对 RS CVn 双星中的星黑子进行 UBVRI 光度测量
  • 批准号:
    8414594
  • 财政年份:
    1985
  • 资助金额:
    $ 4.41万
  • 项目类别:
    Standard Grant

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