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Polarization Dependence of Linear and Nonlinear Gains in Semiconductor Quantum Wells

半导体量子阱中线性和非线性增益的偏振依赖性

基本信息

批准号：
9522864
负责人：
Shun-Lien Chuang
金额：
$ 10万
依托单位：
University of Illinois at Urbana-Champaign
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
1995
资助国家：
美国
起止时间：
1995-09-01 至 1997-08-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9522864&HistoricalAwards=false
关键词：
Polarization Dependence Linear Nonlinear Gains

项目摘要

9522864 Chuang Fundamental linear and nonlinear gains and their polarization dependences in strained semiconductor quantum wells will be investigated theoretically and experimentally. We will design strained quantum wells such that (a) the gain of the TE (parallel to the quantum-well planes) polarization is dominant, (b) the gain of the TM (perpendicular to the planes) polarization is dominant, and (c) the gains of both polarizations have nearly the same magnitude using InGaAs/InGaA1As and InGaAs/InGaAsP material systems. Samples in which the light-hole subband is aligned with or above the heavy-hole subband can be designed such that the gain of the quantum-well active region becomes polarization insensitive. Nonlinear optical gain processes such as band filling and spectral and spatial hole burning effects in strained systems play important roles in these inverted media and will be investigated. Strained quantum wells have important technological applications in optoelectronic devices including semiconductor optical amplifiers and lasers for optical communication systems. With our comprehensive study of the linear and nonlinear gains, polarization-insensitive semiconductor optical amplifiers using strained quantum wells will be designed using both InGaAlAs and InGaAsP systems. ***

9522864 Chuang将从理论和实验上研究应变半导体量子威尔斯阱中的基本线性和非线性增益及其偏振依赖性。我们将设计应变量子威尔斯，使得（a）TE（平行于量子阱平面）偏振的增益占主导地位，（B）TM（垂直于平面）偏振的增益占主导地位，以及（c）使用InGaAs/InGaA 1As和InGaAs/InGaAsP材料系统，两种偏振的增益具有几乎相同的幅度。其中轻空穴子带与重空穴子带对准或在重空穴子带上方的样品可以被设计成使得量子阱有源区的增益变得偏振不敏感。非线性光学增益过程，如带填充和光谱和空间的应变系统中的烧孔效应在这些倒置的介质中起着重要的作用，并将进行研究。应变量子威尔斯在光电子器件中具有重要的技术应用，包括用于光通信系统的半导体光放大器和激光器。通过对线性和非线性增益的综合研究，我们将设计出基于应变量子威尔斯阱的偏振不敏感半导体光放大器。 ***