SBIR Phase I: Indium Thallium Phosphide Semiconductor Diode Lasers - A New Approach to an Old Problem

这个小企业创新研究（SBIR）第一阶段项目将研究一种新的方法，半导体二极管激光器的操作在日益重要的2-5微米波段及以上。 使用磷化铟铊（InTlP），结合InP衬底上开发良好的磷化铟镓砷（InGaAsP）外延材料，可以使高性能激光器结构在室温或近室温下以中红外（IR）波长工作。 在第一阶段中，将通过金属有机化学气相沉积（MOCVD）来生长InTlP。 材料的电学和光学特性将被表征，并且将制造具有InTlP有源区的简单发光二极管（LED）以确定IR激光器的适用性。 初步的激光结构将被设计。 第二阶段将为许多有用的应用制造、表征和优化激光器结构。 第一阶段预计将通过MOCVD提供稳健，高性能，III-V中红外半导体激光器的信息 高度可靠、低成本的二极管激光器，能够在重要的2-5微米波长范围内在室温下工作，将影响许多技术领域。 特别是，这一发展将使紧凑，坚固，最先进的二极管激光器用于环境污染监测，风切变传感，制造过程控制，通信，军事对抗和红外分子光谱学成为可能。

This Small Business Innovation Research (SBIR) Phase I project will examine a novel approach to semiconductor diode laser operation in the increasingly important 2-5 micron band and beyond. Using indium thallium phosphide (InTlP), in conjunction with well-developed indium gallium arsenide phosphide (InGaAsP) epitaxial materials on InP substrates, high performance laser structures may be made to operate at room temperature or near-room temperature at mid-infrared (IR) wavelengths. In Phase I InTlP will be grown by metallo-organic chemical vapor deposition (MOCVD). Electrical and optical properties of the materials will be characterized, and simple light-emitting diodes (LEDs) with an InTlP active region will be fabricated to determine suitability for IR lasers. Preliminary laser structures will be designed. Phase II would fabricate, characterize, and optimize laser structures for many useful applications. Phase I is expected to provide information for robust, high-performance, III-V mid-infrared semiconductor lasers by MOCVD Highly reliable, low cost diode lasers, capable of room temperature operation in the important 2-5 micron wavelength range would impact many technological areas. In particular, this development would make possible compact, robust, state-of-the-art diode lasers for environmental pollution monitoring, wind shear sensing, manufacturing process control, communications, military countermeasures, and IR molecular spectroscopy.