SBIR Phase I: In-Situ Resistivity Measurement of Molecular Beam Epitaxy (MBE)-Grown Layers

SBIR 第一阶段：分子束外延 (MBE) 生长层的原位电阻率测量

• 批准号: 9560259
• 负责人: Vladimir Sokolov
• 金额: $ 7.5万
• 依托单位: TLC Precision Wafer Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-04-01 至 1996-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9560259&HistoricalAwards=false
• 关键词: SBIR; Phase; Situ; Resistivity; Measurement

This Small Business Innovative Research Phase I project will produce a MM-wave sensor that remotely measures sheet resistivity in real time of Molecular Beam Epitaxy (MBE) grown wafers. Manufacturing high performance semiconductor epitaxial wafers by MBE requires precision doping and layer thickness control to obtain optimum device and circuit performance. High reproducibility requires the precise doping and layer thickness to be the same every time. The u wafer sheet resistivity is a key calibration parameter that indicates these variables are correct in the final wafer structure. The current approach used for monitoring this parameter is to measure the sheet resistivity on special calibration wafers outside the ultra high vacuum (UHV) chamber of the MBE machine. If the sheet resistivity is out of specification a new calibration run with adjusted growth conditions must be performed before the actual product wafers may be further processed. This entails extra loading and unloading of wafers through the load locks and generally results in production delays and lower MBE throughput. This innovative wave sensor approach eliminates all of this waste. The overall objective for the Phase I effort is to demonstrate the feasibility of in situ monitoring of sheet resistivity of GaAs or InP epitaxial wafers (typically used for MMICs) inside an MBE machine with an instrument located completely outside the UHV chamber. This capability will streamline the production process while providing superior performance and precise reproducibility of the epi-wafers at a reduced cost and higher throughput. This will allow consistent and reliable optimum devices and circuits (e.g. microwave and mm-wave integrated circuits) for various military and commercial system applications. The development of a sheet resistivity sensor for in situ MBE measurements will result in product improvement and reduction of manufacturing costs for high volume production of GaAs and InP epitaxial wafers. The instrument's application, however, is not restricted to any one semiconductor material. It has potential use for any moderately to highly conducting epitaxial material grown on a host substrate including silicon.

这个小型企业创新研究第一阶段项目将生产一种毫米波传感器，可以远程实时测量分子束外延 (MBE) 生长的晶圆的薄层电阻率。通过 MBE 制造高性能半导体外延晶圆需要精确的掺杂和层厚控制，以获得最佳的器件和电路性能。高再现性要求精确的掺杂和层厚度每次都相同。 u 晶圆片电阻率是一个关键的校准参数，表明这些变量在最终晶圆结构中是正确的。目前用于监测该参数的方法是测量 MBE 机器超高真空 (UHV) 室外的特殊校准晶圆上的薄层电阻率。如果薄层电阻率超出规格，则必须在进一步处理实际产品晶圆之前执行调整生长条件的新校准运行。这需要通过装载锁额外装载和卸载晶圆，通常会导致生产延迟和MBE吞吐量降低。这种创新的波传感器方法消除了所有这些浪费。 第一阶段工作的总体目标是证明使用完全位于 UHV 室外的仪器对 MBE 机器内的 GaAs 或 InP 外延晶圆（通常用于 MMIC）的薄层电阻率进行原位监测的可行性。该功能将简化生产流程，同时以更低的成本和更高的产量提供外延晶圆的卓越性能和精确再现性。这将为各种军事和商业系统应用提供一致且可靠的最佳设备和电路（例如微波和毫米波集成电路）。 用于原位 MBE 测量的薄层电阻率传感器的开发将改进产品并降低大批量生产 GaAs 和 InP 外延片的制造成本。然而，该仪器的应用并不限于任何一种半导体材料。它对于在包括硅在内的主衬底上生长的任何中等至高度导电的外延材料具有潜在用途。