SBIR PHASE I: Nonlinear Optical Films on GaAs for Integrated Optics
SBIR PHASE I: Nonlinear Optical Films on GaAs for Integrated Optics
批准号:
9560358
负责人:
Kolagani Harshavardhan
金额:
$7.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-03-01 至 1996-08-31
中文摘要
这个小型企业创新研究第一阶段项目的主要目标是在GaAs衬底上开发非线性光学(NLO)薄膜。GaAs上的非线性光学薄膜在集成光学中有许多潜在的应用。通过薄膜方法,可以开发集成光学技术,其中光源、非线性光学元件和检测器可以在同一衬底上开发。目前,在GaAs上生长器件质量的薄膜仍然是一个主要的技术挑战。到目前为止,GaAs上的非线性光学薄膜的性能还没有超过或等于体材料的性能。因此,迫切需要一种改进的生长方法,以促进与目前可用的那些相比具有上级质量的膜。此外,为了与GaAs集成,需要较低的生长温度。建议的第一阶段的努力的主要目标是探索离子束辅助脉冲激光沉积(IBPLD)作为一种新的低温技术的GaAs衬底上生长高品质的非线性光学薄膜的潜力。该方法将需要通过IBPLD技术合成NLO膜,并确定与GaAs工艺兼容的关键工艺参数,以获得最佳的非线性光学特性。作为一个原型,KTa 0.52 Nb 0.48 O3薄膜的Tc为88 C将外延沉积在GaAs衬底上的MgO缓冲层和他们的非线性光学性能进行评估。 GaAs基非线性光学薄膜在光信号处理、光计算和光束控制等方面具有独特的应用前景。薄膜工艺技术是通用的,可能会导致新一代的集成光学器件。对于Neocera来说,非线性光学薄膜技术和商业IBPLD系统作为商品产品,可以进一步扩大现有的市场基础。
英文摘要
This Small Business Innovation Research Phase I project has the primary objective of developing nonlinear optical (NLO) thin films on GaAs substrates. NLO films on GaAs offer a number of potential applications in integrated optics. With the thin film approach it is possible to develop an integrated optics technology in which light sources, nonlinear optical components and detectors may be developed on the same substrate. At present, the growth of device quality films on GaAs remains a major technological challenge. Until now, the performance of the NLO films on GaAs has not exceeded or equaled the performance of the bulk counterparts. Therefore an immediate need exists for an improved growth process for promoting superior quality films compared to those presently available. Also, for integration with GaAs, lower growth temperatures are required. The primary objective of the proposed Phase I effort is to explore the potential of ion beam assisted pulsed laser deposition (IBPLD) as a new low temperature technique for the growth of high quality nonlinear optical films on GaAs substrates. The approach will require synthesis of NLO films by IBPLD technique and identification of critical process parameters that are compatible with GaAs processing leading to optimum nonlinear optical properties. As a prototype, KTa 0.52 Nb0.48 O3 films with a Tc of 88 C will be epitaxially deposited on GaAs substrates with MgO buffer layers and their nonlinear optical performance will be evaluated. The nonlinear optical films on GaAs offer unique device possibilities in optical signal processing, optical computing and beam steering. The film process technology is generic and could lead to a new generation of integrated optical devices. For Neocera, the nonlinear optical thin film technologies and commercial IBPLD systems, as commodity products, could further expand the existing market base.
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项目类别:Standard Grant
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资助金额:$10.0万
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负责人:Kolagani Harshavardhan
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依托单位:
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项目类别:Standard Grant
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依托单位:
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批准号:9560360
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:1996
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负责人:Kolagani Harshavardhan
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依托单位:
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