SBIR Phase I: High Temperature Superconducting Materials Development for High Power RF and Microwave Components

SBIR 第一阶段：高功率射频和微波元件的高温超导材料开发

• 批准号: 9560360
• 负责人: Kolagani Harshavardhan
• 金额: $ 7.5万
• 依托单位: NEOCERA, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-04-01 至 1996-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9560360&HistoricalAwards=false
• 关键词: SBIR; Phase; Temperature; Superconducting; Materials

This Small Business Innovation Research Phase I project will develop high temperature superconducting (HTS) films with a high power handling capability for high power RF and microwave components. RF and microwave passive components derived from HTS thin film technology offer several advantages in performance over the conventional metallic components. However, even though HTS thin film components exhibit very high-Q values, their power handling capability is often limited, imposing restrictions on the range of possible applications. Innovative approaches in HTS thin film process technology are required to obtain the film quality needed to overcome this problem. The proposed approach combines improved thin film processing techniques with the design flexibility offered by a low dielectric constant substrate (MgF2) in achieving this goal. Ag-doped YBCO films on low dielectric constant MgF2 substrates (dielectric constant 5.4) with Sr2(Al,T)aO6 structural template, proposed in this feasibility effort are expected to result in at least an order of magnitude enhancement in the RF power handling capability of the films compared to those currently available. HTS films with a high power handling capability would enable the design of high power HTS filters, multiplexers and filter banks. The major reduction in volume and weight together with improved performance of such devices in emerging high performance Transmit/ Receive systems is expected to outweigh the cost of cooling HTS circuitry to 77K.

该小型企业创新研究第一阶段项目将开发具有高功率处理能力的高温超导 (HTS) 薄膜，用于高功率射频和微波组件。与传统金属元件相比，源自高温超导薄膜技术的射频和微波无源元件在性能方面具有多种优势。然而，尽管高温超导薄膜元件表现出非常高的 Q 值，但它们的功率处理能力通常有限，从而限制了可能的应用范围。需要采用高温超导薄膜工艺技术的创新方法来获得克服这一问题所需的薄膜质量。 所提出的方法将改进的薄膜加工技术与低介电常数基板 (MgF2) 提供的设计灵活性相结合，以实现这一目标。本可行性工作中提出的低介电常数 MgF2 衬底（介电常数 5.4）上的 Ag 掺杂 YBCO 薄膜具有 Sr2(Al,T)aO6 结构模板，预计与现有薄膜相比，薄膜的射频功率处理能力至少提高一个数量级。 具有高功率处理能力的高温超导薄膜将使高功率高温超导滤波器、多路复用器和滤波器组的设计成为可能。新兴高性能发送/接收系统中此类设备体积和重量的大幅减少以及性能的提高预计将超过将 HTS 电路冷却至 77K 的成本。