US-India Cooperative Research: Processing, Properties, and Characterization of Ferroelectric Films, Award in U.S. and Indian Currencies

美印合作研究：铁电薄膜的加工、性能和表征，以美国和印度货币获奖

• 批准号: 9604988
• 负责人: Ram Katiyar
• 金额: $ 3.01万
• 依托单位: University of Puerto Rico-Rio Piedras
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-04-01 至 2001-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9604988&HistoricalAwards=false
• 关键词: US; India; Cooperative; Research; Processing

9604988 Katiyar Description: This award supports the U.S.-India Cooperative Research: Processing, Properties, and Characterization of Ferroelectric Films. The collaborators are R.S. Katiyar, University of Puerto Rico, S.B. Desu, Virginia Polytechnic Institute, and D.C. Agrawal, Indian Institute of Technology, Kanpur. The researchers will study thin films of novel optoelectronics and ferroelectrics with the aim of enhancing understanding of synthesis and processing, materials characterization and modelling of thin film growth and properties. Various techniques will be used to probe the micro-to nano-scale compositions, structure and characterization in order to establish structure-property relationships in these novel materials. Fundamental research on ferroelectric thin films holds great potential for eventual application in electro-optical devices, microwave electronics, micro sensors, and high density packaging. Scope: This project supports a new collaboration between two U.S. research institutions and the Indian Institute of Technology, Kanpur. All facilities are equipped with state-of-the-art instrumentation for the proposed synthesis, characterization and modelling work. The research is expected to stimulate a long-term science and engineering link among three centers-of- excellence. The project is mutually beneficial and meets INT criteria for support. ***

9604988 Katiyar描述：此奖项支持美国-印度合作研究：加工，性能和表征 铁电薄膜 合作者是R.S. Katiyar，波多黎各大学，学士 德苏，弗吉尼亚理工学院，和D.C.阿格拉瓦尔，印度理工学院，坎普尔。 研究人员将研究新型光电子和铁电薄膜，旨在提高对合成和加工，材料表征以及薄膜生长和特性建模的理解。 将使用各种技术来探测微米到纳米尺度的组成，结构和表征，以建立这些新材料的结构-性能关系。 铁电薄膜的基础研究对于最终在电光器件、微波电子学、微传感器和高密度封装中的应用具有巨大的潜力。 范围：该项目支持两个美国研究机构与印度理工学院（坎普尔）之间的新合作。 所有设施都配备了最先进的仪器，用于拟议的合成，表征和建模工作。 该研究预计将促进三个卓越中心之间的长期科学和工程联系。 该项目是互利的，符合INT的支持标准。 ***