GOALI: Model-Based Equipment Control in Microelectronics Manufacturing

摘要-埃德加/Trachtenberg - 9614174 该项目致力于为下一代快速热处理（RTP）和单晶片处理等离子体蚀刻工具联合开发、实施、验证和转让先进的基于模型的控制系统。 这是得克萨斯大学、Advanced Micro Devices（AMD，Austin）、一家制造商以及两个工具开发商和设备供应商之间的联合计划：Matrix Integrated Systems（Austin，TX）和AG Associates（圣何塞，CA）。 微电子制造需要先进的系统技术，以实现令人满意的产量，最大限度地提高产量，并降低0.25微米半导体的成本。 改进的数学模型、传感器和控制系统可以提供响应于工艺环境和市场需求的变化而自动调整加工条件的能力。 为了展示关键概念，PI将专注于使用单晶片反应器的最新技术。 对于各种商业设备系统，在快速热处理中，将开发将操作和设备设计变量与性能相关联的基本（理论）数学模型。 这些模型将使用位于不同工业场所的商用设备的生产数据进行验证。 接下来，他们将研究新传感器和控制策略的应用，从而为每个反应堆设计先进的基于模型的控制器。 由此产生的控制系统将进行测试与实时计算机控制的反应堆使用现场直接和间接测量将进行调查，以提高控制器的性能。 对于等离子体蚀刻系统，他们将专注于监测终点信号，以确定何时达到终点，或者设备或晶圆是否发生故障。

Abstract - Edgar/Trachtenberg - 9614174 This project involves efforts directed toward the joint development, implementation, validation and transfer of advanced model-based control systems for next generations rapid thermal processing (RTP) and plasma etching tools for single wafer processing. It is a joint program between the University of Texas, Advanced Micro Devices (AMD, Austin), a manufacturer, and two tool developers and equipment suppliers: Matrix Integrated Systems (Austin, TX) and AG Associates (San Jose, CA). Microelectronics manufacturing requires advanced systems technology in order to achieve satisfactory yields, maximize throughput and reduce costs for 0.25 micrometer semiconductors. Improved mathematical models, sensors, and control systems can provide the capability to automatically adjust processing conditions in response to changes in the process environment and market requirements. To demonstrate the key concepts, the PI's will focus on the latest technology using single-wafer reactors. For various commercial equipment systems, in rapid thermal processing, fundamental (theoretical) mathematical models will be developed that relate the operating and equipment design variables to performance. These models will be verified using production data from commercial equipment located at various industrial sites. Next they will research the application of new sensors and control strategies that permit design of advanced model-based controllers for each reactor. The resulting control systems will be tested with real-time computer control of the reactors use of in-situ direct and indirect measurements will be investigated to improve controller performance. For plasma etching systems, they will focus on the monitoring of end-point signals to determine when the end point is reached or if a fault has occurred with the equipment or wafer.