Development of Mathematical Models and Control Strategies for Solid State Device Processing

固态器件加工数学模型和控制策略的开发

• 批准号: 8806256
• 负责人: Thomas Edgar
• 金额: $ 29.79万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-07-01 至 1991-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8806256&HistoricalAwards=false
• 关键词: Development; Mathematical; Models; Control; Strategies

Low pressure, nonequilibrium, electric discharge (plasma) processes are used in the microelectronics industry to deposit and etch thin films. Plasma enhanced chemical vapor deposition (CVD) enables film deposition at low temperatures and can provide new materials with special material and electronic properties. Plasma etching is presently used for etching of masking materials, silicon, silicon-containing materials, compound semiconductors, and metals. In the production of a typical microchip, ten or more steps may involve plasma etching. In this industry, processing is rarely automated to a high degree. Real- time monitoring and control could aid in exploiting the fine geometry transfer available in plasma etching as well as increase process yields by introducing dynamic treatment of process variables. The PIs plan a comprehensive study of mathematical models and process control strategies for plasma etching, reactive ion etching and CVD. Plasma deposition and etch rates are affected by a large number of process variables including gas composition, pressure, temperature, reactor geometry, electric discharge frequency, and power. To model and develop control strategies for such systems both theoretical and experimental studies are planned. A research etcher utilizing a radial flow configuration with analytical systems and data acquisition has already been constructed and the PIs plan to construct laboratory-scale CVD apparatus. Based on experimental results, physico-chemical models will be developed and verified followed by the formulation and implementation of both dynamic and steady state control strategies.

低压、非平衡、放电（等离子体） 工艺用于微电子工业以存款 并蚀刻薄膜。 等离子体增强化学气相沉积 (CVD)能够在低温下进行薄膜沉积， 具有特殊材料和电子性能的新材料。 等离子体蚀刻目前用于掩模的蚀刻， 材料，硅，含硅材料，化合物 半导体和金属。 在生产一个典型的 微芯片，十个或更多个步骤可能涉及等离子体蚀刻。 在这 在工业中，加工很少高度自动化。 真实的- 时间监测和控制可以帮助利用罚款 等离子体蚀刻中可用的几何形状转移以及增加 通过引入过程的动态处理， 变量 PI计划对数学模型进行全面研究， 等离子体刻蚀工艺控制策略，反应离子 蚀刻和CVD。 等离子体沉积和蚀刻速率受到影响 通过包括气体组成的大量工艺变量， 压力、温度、反应器几何形状、放电 频率和功率。 建模和开发控制策略 对于这样的系统，理论和实验研究都是 计划好了 利用径向流动配置的研究蚀刻器 分析系统和数据采集已经 建造，PI计划建造实验室规模的CVD 设备. 根据实验结果，物理化学 将开发和验证模型，然后制定 以及动态和稳态控制的实现 战略布局