SGER: Nested-Well Penning-Malmberg Trap for use as a Semiconductor Processing Plasma Reactor

Carlos Ordonez这是一笔探索性研究（SGER）的小额赠款，用于开发巢状井Penning-Malmberg等离子体处理反应堆的首次分析和计算描述。新的嵌套井结构可以在内外电势井中限制重叠的离子和电子等离子体，这为限制离子密度提供了一种方法，可以超过传统单井Penning-Malmberg阱中出现的严重离子密度限制。因此，当被安排在这种新颖的嵌套井结构中时，Penning-Malmberg陷阱可能适合用于微电子和其他领域的材料处理等离子体反应器。与现有反应器相比，这种反应器的潜在优势是显著的：改进了对物理到化学蚀刻速率的控制，近乎完美地控制了等离子体离子到加工表面的通量，更清洁的等离子体，平衡的平坦等离子体密度分布，在加工过程中接近均匀，即使改进了等离子体约束控制，也可以降低功率要求。除了详细的理论分析外，还设计了一个后续实验来验证操作描述，这是本文的主体。＊＊＊

9627612 Carlos Ordonez This is a Small Grant for Exploratory Research (SGER) for the development of the first analytical and computational description of a nested well Penning-Malmberg plasma processing reactor. The new nested well configuration may allow confinement of overlapping ion and electron plasmas within inner and outer electric potential wells, which provides a means for the confined ion density to exceed the severe ion density limit which occurs within the traditional single well Penning-Malmberg trap. When arranged in this novel nested well configuration therefore, Penning-Malmberg traps become potentially suitable for use as materials processing plasma reactors in microelectronics and other areas. The potential advantages of this type of reactor over existing reactors are significant: improved control of the physical to chemical etching rates with near perfect control of the plasma ion flux to processed surface, cleaner plasmas, equilibrium flat plasma density profiles for near uniformity in processing and low power requirements even with improved plasma confinement control. The design of a proposed follow-on experiment for verifying the operation description is included, in addition to the detailed theoretical analysis which forms the main body of the work. ***