Interband Coupling in Type-II Quantum Wells Studied with Scanning Tunneling Microscopy

使用扫描隧道显微镜研究 II 型量子阱中的带间耦合

• 批准号: 9633011
• 负责人: Michael Weimer
• 金额: $ 31.8万
• 依托单位: Texas A&M Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-15 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9633011&HistoricalAwards=false
• 关键词: Interband; Coupling; Type; II; Quantum

9633011 Weimer This research project aims to gain fundamental understanding of the relationship between interface quality and carrier wave function overlap in quantum well semiconductor structures. The approach is to examine the influence of Al(Ga)Sb barriers on the interband coupling in model InAs/Ga(In)Sb/Al(Ga)Sb structures that comprise the active regions in type-II quantum well and quantum cascade lasers. Scanning tunneling microscopy(STM) and spectroscopy(STS) will be used to provide fundamental data on interface quality and will be related to carrier wave function overlap. The insights developed from analysis of the STM and STS data will be used in MBE growth and subsequent processing studies to optimize material quality, growth sequence, design and fabrication of type-II mid-IR lasers. %%% The research will contribute basic materials science knowledge at a fundamental level of technological relevance to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9633011魏默这个研究项目的目的是从根本上了解量子阱半导体结构中界面质量与载波函数重叠之间的关系。该方法是研究Al(Ga)Sb势垒对InAs/Ga(In)Sb/Al(Ga)Sb结构模型中带间耦合的影响。InAs/Ga(In)Sb/Al(Ga)Sb结构构成了第二类量子阱和量子级联激光器的有源区。扫描隧道显微镜(STM)和光谱学(STS)将被用来提供关于界面质量的基本数据，并将与载波函数重叠相关。对STM和STS数据的分析得出的见解将用于分子束外延生长和后续工艺研究，以优化材料质量、生长顺序、第二类中红外激光器的设计和制造。这项研究将在与先进电子/光子器件和集成电路的几个方面相关的基础技术层面上贡献基本的材料科学知识。此外，从这项研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而在总体上为提高先进器件和电路的性能做出贡献。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***