SBIR Phase I: An Investigation of a Rheotaxial Growth of Diamond

SBIR 第一阶段：金刚石流变生长的研究

• 批准号: 9660155
• 负责人: P. Fang
• 金额: $ 7.5万
• 依托单位: F S Lab
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 1997-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9660155&HistoricalAwards=false
• 关键词: SBIR; Phase; Investigation; Rheotaxial; Growth

*** 96-60155 Fang This Phase I Small Business Innovation Research Project will grow large area single crystal diamond films. In this approach, diamond will grow by a chemical vapor deposition process on a liquid substrate. This is to replace the conventional growth on solid substrate approach. The utilities of the liquid substrate are its ideal smoothness, and its amorphosity (and therefore an absence of grain boundaries). Liquid substrate provides a high mobility for carbon to facilitate an aggregation on two levels: (i) carbon atoms migrate on the liquid surface to form diamond crystallites, and, (ii) the floating diamond crystallites coalesce to form a large single crystal. Thus, the present approach represents a basic alteration from the conventional solid substrate and an opportunity to grow large area single crystal diamond is provided. Successfully grown large area single crystal diamond films will be essential to a realization of diamond electronic devices and integral circuits. ***

本项目一期小企业创新研究项目将种植大面积单晶金刚石薄膜。在这种方法中，金刚石将通过化学气相沉积过程在液体衬底上生长。这是为了取代传统的在固体衬底上生长的方法。液体衬底的优点是其理想的平滑性和无定形（因此没有晶界）。液体衬底为碳提供了高迁移率，促进了两个层面上的聚集：(i)碳原子在液体表面迁移形成金刚石晶体，（ii）漂浮的金刚石晶体聚结形成大单晶。因此，目前的方法代表了传统固体衬底的基本改变，并提供了生长大面积单晶金刚石的机会。大面积单晶金刚石薄膜的成功生长是实现金刚石电子器件和集成电路的必要条件。＊＊＊