Elastic Properties on Thin Metal Films

金属薄膜的弹性特性

• 批准号: 9701972
• 负责人: Robert Pohl
• 金额: --
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-07-15 至 2001-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9701972&HistoricalAwards=false
• 关键词: Elastic; Properties; Thin; Metal; Films

9701972 Pohl This is a renewal proposal on the elastic properties of thin metal films. A new technique has been developed with which the shear modulus and internal friction of films with thicknesses as small as 10 nm on silicon substrates can be measured at low temperatures. The substrates are couleDpaddle oscillators which are chemically etched out of 0.3 mm thick ultrahigh purity silicon wafers. These oscillators are to be used to study polycrystalline metal films deposition by various techniques. in which exploratory measurements have revealed an internal friction which resembles that of amorphous solids. It is remarkably independent of the metal used, and at this point shows little dependence on the way in which the film has been deposited. As a possible explanation, tunneling states of dislocations will be explored. %%% This is a renewal proposal on the elastic properties of thin metal films. This metal films on substrates are often used, e.g., as current leads in the microelectronic devices. In order to ensure their performance, defects in such films have to be identified and controlled. In previous work, we have developed a new technique for measuring elastic constants of crystalline metal films on silicon substrates. We have found that all films measured so far hjave an internal friction at low temperatures which resembles that of amorphous solids, indicating a considerable amount of disorder. The objective of this investigation is to identify this disorder, and to find ways to reduce it.

小行星9701972 这是对金属薄膜弹性性质的一个更新建议。 本文介绍了一种在低温下测量硅衬底上厚度小至10 nm薄膜的剪切模量和内耗的新技术。 该基板是couleDpaddle振荡器，其化学蚀刻出0.3毫米厚的高纯硅晶片。 这些振荡器将用于研究多晶金属薄膜沉积的各种技术。其中探索性测量揭示了类似于无定形固体的内部摩擦。 它与所使用的金属无关，并且在这一点上几乎不依赖于薄膜沉积的方式。 作为一种可能的解释，隧道状态的位错将被探讨。 %这是关于薄金属膜的弹性性质的更新建议。 这种在基底上的金属膜经常被使用，例如，作为微电子器件中的电流引线。 为了确保其性能，必须识别和控制此类膜中的缺陷。 在以前的工作中，我们已经发展了一种新的技术来测量硅衬底上的晶体金属薄膜的弹性常数。 我们已经发现，迄今为止所测量的所有薄膜在低温下都具有类似于非晶固体的内耗，这表明存在相当大的无序。 这项研究的目的是确定这种疾病，并找到减少它的方法。