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Investigation of Thermally Stable Contacts on Silicon Carbide and Gallium Nitride for High Temperature Device Applications

Investigation of Thermally Stable Contacts on Silicon Carbide and Gallium Nitride for High Temperature Device Applications
用于高温器件应用的碳化硅和氮化镓热稳定接触的研究
批准号:
9713371
负责人:
Lisa Porter
金额:
$6.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-09-01 至 1999-02-28

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中文摘要
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英文摘要
The PI will establish a new research program investigating the metallisation schemes which offer potential for implementation if wide band-gap (GaN, SiC) semiconductor devices. Her research will combine knowledge of interfacial reactions and materials properties with an understanding of the physics of Schottky barriers and the associated interfacial current transport mechanisms.
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Epitaxial Film Growth and Characterization of Stable and Metastable Gallium-Aluminum-Oxide Polymorphs
  • 批准号:
    2324375
  • 项目类别:
    Standard Grant
  • 资助金额:
    $48.86万
  • 财政年份:
    2023
  • 负责人:
    Lisa Porter
  • 依托单位:
EAGER: Formative Research on Contacts to Gallium-Oxide for Electronic and Optoelectronic Devices
  • 批准号:
    1642740
  • 项目类别:
    Standard Grant
  • 资助金额:
    $12.0万
  • 财政年份:
    2016
  • 负责人:
    Lisa Porter
  • 依托单位:
I-Corps: Accelerated Innovation and Technology Transition in Semiconductor-Based Hydrogen and Hydrocarbon Sensors
  • 批准号:
    1157919
  • 项目类别:
    Standard Grant
  • 资助金额:
    $5.0万
  • 财政年份:
    2011
  • 负责人:
    Lisa Porter
  • 依托单位:
Novel molecular engineering and processing approaches for high-performance organic transistor devices: the role of polymer structure and morphology
  • 批准号:
    0824188
  • 项目类别:
    Standard Grant
  • 资助金额:
    $50.0万
  • 财政年份:
    2008
  • 负责人:
    Lisa Porter
  • 依托单位:
海外基金