Investigation of Thermally Stable Contacts on Silicon Carbide and Gallium Nitride for High Temperature Device Applications

用于高温器件应用的碳化硅和氮化镓热稳定接触的研究

• 批准号: 9713371
• 负责人: Lisa Porter
• 金额: $ 6.5万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-09-01 至 1999-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9713371&HistoricalAwards=false
• 关键词: Investigation; Thermally; Stable; Contacts; Silicon

The PI will establish a new research program investigating the metallisation schemes which offer potential for implementation if wide band-gap (GaN, SiC) semiconductor devices. Her research will combine knowledge of interfacial reactions and materials properties with an understanding of the physics of Schottky barriers and the associated interfacial current transport mechanisms.

PI将建立一个新的研究计划，研究为实现宽禁带(GaN，SiC)半导体器件提供潜力的金属化方案。她的研究将结合界面反应和材料性质的知识，并了解肖特基势垒的物理和相关的界面电流传输机制。