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CAREER: Structural Studies of Metal Interfaces on High-Index Silicon Surfaces

CAREER: Structural Studies of Metal Interfaces on High-Index Silicon Surfaces
职业:高折射率硅表面金属界面的结构研究
批准号:
9733398
负责人:
Alison Baski
金额:
$29.07万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-04-01 至 2002-03-31

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中文摘要
翻译
这个职业项目涉及金属-半导体界面的基本表面科学方面。贵金属的生长行为将在由高折射率(“倾斜”)硅表面提供的独特模板上进行检验。这些界面的结构和电子特性将使用扫描隧道显微镜(STM)结合第一性原理,电子结构计算来研究。这种方法有望使原子结构模型的发展和对这些界面的形成和性质的更深入的理解成为可能。这项研究的动机是最近STM对(001)和(111)之间的清洁高指数表面的研究,这些研究揭示了独特的行状结构,而这些结构在更知名的低指数表面上并不存在。预计潜在的Si结构将导致金属覆盖层在纳米尺度上形成新的结构(例如纳米线)。这个项目的一个补充教学部分侧重于以微积分为基础的介绍性物理序列的课程开发。这三个学期的实验将介绍计算机接口实验和更有效地整合课程内容。本课程旨在为学生提供坚实的材料物理基础,特别是培养学生的实验和分析能力。该项目涉及具有高技术相关性的材料科学主题领域的前沿研究问题。总的来说,这项研究将为电子材料和器件的重要方面提供基础材料科学知识。该计划的一个重要特点是强调教育,并通过培养学生在一个根本性和技术上重要的研究领域的研究和教育的整合。***
英文摘要
9733398 Baski This CAREER project addresses fundamental surface science aspects of metal-semiconductor interfaces. The growth behavior of noble metals will be examined on unique templates provided by high-index ("tilted") silicon surfaces. The structural and electronic properties of these interfaces will be studied using scanning tunneling microscopy (STM) in conjunction with first-principles, electronic-structure calculations. This approach is expected to enable the development of atomic structural models and a deeper understanding of the formation and properties of these interfaces. The research is motivated by recent STM investigations of clean high-index surfaces oriented between (001) and (111) that have revealed unique row-like structures which do not exist on the more well-known low-index surfaces. It is anticipated that the underlying Si structure will cause metal overlayers to form novel structures on the nanometer scale (e.g. nanowires). A complementary teaching component of this project focuses on course development in an introductory calculus-based physics sequence. Labs for this three-semester sequence will introduce computer-interfaced experiments and more effective integration of lecture components. The aim is to provide a firm foundation in materials physics, and especially to develop studentsO experimental and analytical skills. %%% The project addresses forefront research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic materials and devices, in general. An important feature of the program is the emphasis on education, and on the integration of research and education through the training of students in a fundamentally and technologically significant research area. ***
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Role of the Surface in the Electrical and Optical Properties of GaN and ZnO
  • 批准号:
    0804679
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $30.75万
  • 财政年份:
    2008
  • 负责人:
    Alison Baski
  • 依托单位:
Structure and Reactivity of Metal-Induced 1D Nanostructures on High-Index Silicon Surfaces
  • 批准号:
    0207643
  • 项目类别:
    Standard Grant
  • 资助金额:
    $19.67万
  • 财政年份:
    2002
  • 负责人:
    Alison Baski
  • 依托单位:
国内基金
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  • 资助金额:
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  • 批准年份:
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  • 负责人:
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  • 依托单位: