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SBIR Phase I: Enhanced P-Type Conductivity in GaN

SBIR 第一阶段：增强 GaN 中的 P 型电导率

基本信息

批准号：
9760579
负责人：
Peter Norris
金额：
$ 9.99万
依托单位：
Corning Applied Technologies Corporation
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
1998
资助国家：
美国
起止时间：
1998-01-01 至 1998-08-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9760579&HistoricalAwards=false
关键词：
SBIR Phase Enhanced Type Conductivity

项目摘要

*** 9760579 Norris This Small Business Innovation Research Phase I project aims to solve the p-type doping problem in III-V nitrides by means of a novel variant on the concept of 'bandgap engineered' doping. It is shown that this approach can enhance the electrical activation of impurities and thus strongly increase the free carrier concentration.'Initial calculations predict p+ material is possible which is of great importance to III-N laser technology. Research in III-V nitride materials has resulted in substantial progress over the last few years including the demonstration of efficient green/blue light-emitting diodes, and lasers emitting in the ultraviolet and the blue part of the optical spectrum. The thermal stability of III-V nitrides and the high radiative efficiency of highly dislocated materials grown on sapphire has led to much interest in the field. However, several significant problems remain to be solved in this new class of materials, One of these issues, the "p-type doping problem' is due to the large thermal activation energy of acceptors in GaN and other III-V nitrides. The commercial applications of p+ doping for low resistance p-contacts are manifold. These include all 111-N LEDs that is: blue, green and yellow , III-N lasers as well as high frequency, high power vertical JFETs for microwave applications.

* 9760579诺里斯这个小型企业创新研究第一阶段项目旨在通过“带隙工程”掺杂概念的新变体来解决III-V族氮化物中的p型掺杂问题。结果表明，这种方法可以增强杂质的电激活，从而大大增加自由载流子浓度。初步计算预测p+材料是可能的，这对III-N激光技术非常重要。III-V族氮化物材料的研究在过去几年中已经取得了实质性进展，包括高效的绿色/蓝色发光二极管以及在光谱的紫外和蓝色部分中发射的激光器的展示。 III-V族氮化物的热稳定性和生长在蓝宝石上的高度位错材料的高辐射效率已经引起了该领域的极大兴趣。然而，在这类新材料中仍有几个重要问题有待解决。这些问题之一，“p型掺杂问题”是由于GaN和其他III-V族氮化物中受主的大的热激活能。用于低电阻p接触的p+掺杂的商业应用是多种多样的。这些包括所有111-N LED，即：蓝色、绿色和黄色、III-N激光器以及用于微波应用的高频、高功率垂直JFET。