SBIR Phase II: High Performance Vertical Heterojunction Bipolar Transistor (HBT) on SiC Using Novel III-Nitride Technology

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This Small Business Innovative Research Phase II Project is aimed to develop a novel vertical geometry Heterojunction Bipolar Transistor (HBT) based on III-nitride heterostructures grown on SiC (silicon carbide). There is a strong need for high power HBTs for highly linear, high power microwave amplifiers. The innovation of this proposal is to demonstrate WBG (wide band gap) HBTs on SiC that will take advantage of the vertical geometry, and high thermal conductivity of SiC through the use of highly conductive novel nitride buffer and base structure to enhance p-type lateral conductivity with improved vertical transport properties through the base.The proposed vertical WBG HBT device is a critical component for a new generation of satellite and base stations for wireless communication networks. Another application area is DC switch components for high power electronics.