SBIR Phase II: High Performance Vertical Heterojunction Bipolar Transistor (HBT) on SiC Using Novel III-Nitride Technology

SBIR 第二阶段：采用新型 III 氮化物技术的 SiC 高性能垂直异质结双极晶体管 (HBT)

• 批准号: 9983390
• 负责人: Peter Norris
• 金额: $ 39.97万
• 依托单位: Corning Applied Technologies Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-04-01 至 2002-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9983390&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Performance; Vertical

This Small Business Innovative Research Phase II Project is aimed to develop a novel vertical geometry Heterojunction Bipolar Transistor (HBT) based on III-nitride heterostructures grown on SiC (silicon carbide). There is a strong need for high power HBTs for highly linear, high power microwave amplifiers. The innovation of this proposal is to demonstrate WBG (wide band gap) HBTs on SiC that will take advantage of the vertical geometry, and high thermal conductivity of SiC through the use of highly conductive novel nitride buffer and base structure to enhance p-type lateral conductivity with improved vertical transport properties through the base.The proposed vertical WBG HBT device is a critical component for a new generation of satellite and base stations for wireless communication networks. Another application area is DC switch components for high power electronics.

该小型企业创新研究第二阶段项目旨在开发一种基于SiC（碳化硅）上生长的III族氮化物异质结构的新型垂直几何异质结双极晶体管（HBT）。 对于高线性、高功率微波放大器，存在对高功率HBT的强烈需求。 本提案的创新之处在于，SiC上的（宽带隙）HBT将利用垂直几何形状，和SiC的高导热性，通过使用高导电性的新型氮化物缓冲层和基极结构来增强p-垂直WBG HBT器件是新一代卫星和基地的关键部件用于无线通信网络的站。 另一个应用领域是用于大功率电子设备的直流开关元件。