SBIR Phase I: SnGe Photoconductive Arrays for Mid-Infrared Detection

* 9760945米汉 这个小企业创新研究第一阶段项目将使用NSF赞助的SnGe薄膜研究，在Si衬底上开发红外二维SnxGel-x光电导阵列。 SnxGel-x（Ox0.15）的直接带隙从0.8eV变化到0.25eV。随着Sn浓度的增加，有可能覆盖超过4@m的波长范围延伸到远红外区域。 拟议的第一阶段项目的目标将是证明，高品质，4x 4光电导阵列可以使用p型SnxGel-x薄膜（x=0.15）生长在硅基板上制造。材料问题将得到解决，包括缺陷的表征，带隙与组合物的探索，和n型材料的发展。 欧姆和Schoftky接触的SnGe薄膜将被开发，以及电气和光学隔离技术。 器件的特性将包括响应度作为波长和温度的函数，S/N比和高速响应时间。 工艺将被开发，这将使更大的阵列与硅电路集成的发展”在第二阶段。 需要稳定、低成本、中红外探测器的应用包括阈值检测和定量测量，如火灾探测、夜视、热成像和光学化学光谱。 ***

*** 9760945 Meehan This Small Business Innovation Research Phase I project will use NSF-sponsored research on SnGe films to develop of an infrared two-dimensional SnxGel-x photoconductive array on Si substrates. The direct bandgap of the SnxGel-x (Ox0.15) varies from 0.8eV to 0.25eV. There is a potential of covering a wavelength range extending beyond 4@m into the far-infrared region with increasing Sn concentrations. The goal of the proposed Phase I project will be to demonstrate that high quality, 4x4 photoconductive arrays can be fabricated using p-type SnxGel-x films (x=0.15)grown on Si substrates. Material issues will be addressed including characterization of defects, exploration of the bandgap versus composition, and the development of n-type material. Ohmic and Schoftky contacts the SnGe films will be developed as well as electrical and optical isolation techniques. Characterization of the devices will include responsivity as a function of wavelength and temperature, S/N ratio, and the high speed response time. Processes will be developed that will enable the development of larger arrays integrated with Si circuitry" in Phase II. Applications requiring a stable, low cost, mid-IR detector include threshold sensing and quantitative measurements such as fire detection, night vision, thermal imaging and optical chemical spectroscopy. ***