SBIR Phase I: Novel Methods for Polysilicon Deposition Using Silicon Tubes

SBIR 第一阶段：使用硅管沉积多晶硅的新方法

• 批准号: 9761291
• 负责人: Mohan Chandra
• 金额: $ 10万
• 依托单位: GT EQUIPMENT TECHNOLOGIES
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-01-01 至 1998-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9761291&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Methods; Polysilicon

*** Chandra 9761291 This Small Business Innovation Research (SBIR) Phase I project will explore a novel technique of using silicon (Si) tubes for the production of polycrystalline silicon, a material critical for electronics, photovoltaics, micro-electromechanical systems (MEMS), and many other devices. A current worldwide shortage of polysilicon material may become acute in the future. Bulk polysilicon is currently produced by chemical vapor deposition of Si on a hot thin crystalline silicon rod. The diameter of the rod increases with the deposition, but the process is very slow in the beginning because of small surface area. Two different Si tube-based deposition techniques will be examined. The first will increase yield by 15-20% by allowing deposition on both inner and outer surfaces of the tube (with simple retrofitting), whereas the second scheme will lead to a much simpler reactor design with a much reduced energy requirement, better control, and higher yield. Phase I will establish the relative feasibility of the two concepts through theoretical research, design studies, and industrial testing. Potential commercial applications are expected production of polysilicon in the semiconductor and solar industries ***

* 钱德拉9761291 这个小企业创新研究（SBIR）第一阶段项目将探索一种使用硅（Si）管生产多晶硅的新技术，多晶硅是电子，光电子，微机电系统（MEMS）和许多其他设备的关键材料。 目前世界范围内的多晶硅材料短缺可能在未来变得严重。 块体多晶硅目前通过在热的薄晶体硅棒上化学气相沉积Si来生产。 棒的直径随着沉积而增加，但由于表面积小，该过程在开始时非常缓慢。 两种不同的硅管为基础的沉积技术将被检查。 第一种方案通过允许在管的内表面和外表面上沉积（具有简单的改装）将产率提高15-20%，而第二种方案将导致更简单的反应器设计，具有大大降低的能量需求、更好的控制和更高的产率。 第一阶段将通过理论研究、设计研究和工业试验确定这两个概念的相对可行性。 潜在的商业应用是半导体和太阳能工业中的多晶硅生产 *