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SBIR Phase II: A Novel Method for Enhanced Polysilicon Deposition Using Silicon Tubes

SBIR Phase II: A Novel Method for Enhanced Polysilicon Deposition Using Silicon Tubes
SBIR 第二阶段:使用硅管增强多晶硅沉积的新方法
批准号:
9901717
负责人:
Mohan Chandra
金额:
$40.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1999
资助国家:
美国
项目状态:
已结题
起止时间:
1999-06-15 至 2002-11-30
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项目摘要

项目成果

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中文摘要
翻译
这个小型企业创新研究(SBIR)第二阶段项目将开发一种使用硅(Si)管生产多晶硅的新技术。目前,块体多晶硅是通过化学气相沉积(CVD)在热薄的晶体硅棒上制备的,直径随着沉积的增加而增大。这一过程非常缓慢,无法扩大规模,而且涉及极其复杂和低效的供暖安排。由于半导体和太阳能行业需求的增加,多晶硅在全球范围内出现短缺。管子技术有望通过允许在大直径管子内部沉积来提高产量,降低能源消耗,简化CVD过程,并使过程易于控制。第二阶段将专注于下一代CVD系统的建模、虚拟原型和制造,并将试验生长、沉积和表征方法。多晶硅的生产有望得到商业应用,并将降低其成本。多晶硅材料是电子、光伏、微电子机械系统(MEMS)和许多其他器件的关键材料。
英文摘要
This Small Business Innovation Research (SBIR) Phase II project will develop a novel technique of using silicon (Si) tubes for the production of polycrystalline Si. Bulk polysilicon is currently produced by chemical vapor deposition (CVD) of silicon on hot thin crystalline Si rods, whose diameter increases with the deposition. The process is very slow, cannot be scaled up, and involves extremely complex and inefficient heating arrangements. A worldwide shortage of polysilicon has resulted from the increase of demand in the semiconductor and solar industries. The tube technology is expected to raise yield by allowing deposition on the inside of a large diameter tube, reduce energy consumption, simplify the CVD process, and allow easy control of the process. Phase II will focus on modeling, virtual prototyping, and manufacture of next-generation CVD systems, and will experiment with growth, deposition, and characterization methods. Commercial applications are expected in the production of polysilicon and will reduce its costs. Polysilicon material is critical for electronics, photovoltaics, micro-electromechanical systems (MEMS), and many other devices.
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SBIR Phase I: One-Step Silicon Wafer Manufacturing from Low-Grade Polysilicon for Photovoltaic Applications
  • 批准号:
    9960634
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    2000
  • 负责人:
    Mohan Chandra
  • 依托单位:
SBIR Phase I: Novel Methods for Polysilicon Deposition Using Silicon Tubes
  • 批准号:
    9761291
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    1998
  • 负责人:
    Mohan Chandra
  • 依托单位:
国内基金
海外基金
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  • 负责人:
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  • 项目类别:
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  • 批准年份:
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  • 负责人:
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  • 依托单位:
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