SBIR Phase II: A Novel Method for Enhanced Polysilicon Deposition Using Silicon Tubes

SBIR 第二阶段：使用硅管增强多晶硅沉积的新方法

• 批准号: 9901717
• 负责人: Mohan Chandra
• 金额: $ 40万
• 依托单位: GT EQUIPMENT TECHNOLOGIES
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-15 至 2002-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9901717&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Novel; Method

This Small Business Innovation Research (SBIR) Phase II project will develop a novel technique of using silicon (Si) tubes for the production of polycrystalline Si. Bulk polysilicon is currently produced by chemical vapor deposition (CVD) of silicon on hot thin crystalline Si rods, whose diameter increases with the deposition. The process is very slow, cannot be scaled up, and involves extremely complex and inefficient heating arrangements. A worldwide shortage of polysilicon has resulted from the increase of demand in the semiconductor and solar industries. The tube technology is expected to raise yield by allowing deposition on the inside of a large diameter tube, reduce energy consumption, simplify the CVD process, and allow easy control of the process. Phase II will focus on modeling, virtual prototyping, and manufacture of next-generation CVD systems, and will experiment with growth, deposition, and characterization methods. Commercial applications are expected in the production of polysilicon and will reduce its costs. Polysilicon material is critical for electronics, photovoltaics, micro-electromechanical systems (MEMS), and many other devices.

这个小型企业创新研究（SBIR）第二阶段项目将开发一种使用硅（Si）管生产多晶硅的新技术。 块体多晶硅目前通过在热的薄结晶Si棒上化学气相沉积（CVD）硅来生产，其直径随着沉积而增加。 该过程非常缓慢，无法扩大规模，并且涉及极其复杂和低效的加热安排。 由于半导体和太阳能行业的需求增加，全球多晶硅短缺。 该管技术有望通过允许在大直径管的内部沉积来提高产率，降低能耗，简化CVD工艺，并允许容易地控制工艺。 第二阶段将专注于下一代CVD系统的建模、虚拟原型和制造，并将试验生长、沉积和表征方法。 预计在多晶硅生产中的商业应用将降低其成本。 多晶硅材料对于电子学、光电子学、微机电系统（MEMS）和许多其它装置是关键的。