SBIR Phase I: CuInSe2 (Copper Indium Diselenide) Thermoelectric Devices

SBIR 第一阶段：CuInSe2（二硒化铜铟）热电器件

• 批准号: 9761508
• 负责人: Ingrid Repins
• 金额: $ 10万
• 依托单位: Materials Research Group Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-01-01 至 1998-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9761508&HistoricalAwards=false
• 关键词: SBIR; Phase; CuInSe2; Copper; Indium

*** 9761508 Eisgruber This Small Business Innovative Research Phase I project proposes development of thin film copper indium diselenide (CIS) thermoelectric devices on rigid and flexible substrates, including both development of the film growth process for thermoelectrics and modeling the incorporation of the devices into systems with specific power generation or cooling requirements. Currently, high production costs and low efficiency inhibit the widespread use of thermoelectric devices. Most commercially available thermoelectric devices are manufactured using single crystal semiconductor stacks. Single crystal fabrication technologies are fairly mature; To reduce production costs, new materials and fabrication technologies must be utilized. Recent developments in deposition of CIS for use in thin film photovoltaic modules has been especially dramatic. Interestingly, CuInSe2 also holds great promise for thermoelectric devices. Initial investigation of its thermal properties indicate a very high (exceeding unity) thermoelectric figure of merit. The development of inexpensive, lightweight thermoelectric devices promises a huge commercial potential. Possible applications include electronics cooling, precisely controlled refrigeration for medical applications, power generation from vehicle exhaust heat recovery, and silent, compact air-conditioning for use in ships and submarines. Mobile applications stand to benefit significantly from the development of flexible thermoelectrics, as flexible substrates reduce both weight and packaging size. ***

* 9761508格鲁伯 这个小型企业创新研究第一阶段项目提出了在刚性和柔性基板上开发薄膜铜铟二硒化物（CIS）热电器件，包括热电薄膜生长过程的开发和将器件纳入具有特定发电或冷却要求的系统的建模。 目前，高生产成本和低效率抑制了热电装置的广泛使用。 大多数商业上可获得的热电装置是使用单晶半导体堆叠来制造的。 单晶制造技术已经相当成熟，为了降低生产成本，必须采用新的材料和制造技术。 用于薄膜光伏模块的CIS沉积的最新发展尤其引人注目。 有趣的是，CuInSe 2在热电器件方面也有很大的潜力。 其热性能的初步调查表明，一个非常高的（超过单位）热电的优点。 廉价、轻便的热电器件的发展具有巨大的商业潜力。 可能的应用包括电子冷却，医疗应用的精确控制制冷，车辆排气热回收发电，以及用于船舶和潜艇的静音紧凑型空调。 移动的应用将从柔性热电器件的发展中显著受益，因为柔性基板降低了重量和封装尺寸。 ***