JSPS Fellowship: Investigation of Quantum Dynamics of Coherent Phonon Generation in Semiconductor Nanos

赫尔利9802624 该奖项支持日本科学促进协会（JSPS）为大卫赫尔利博士在日本札幌的北海道大学提供为期12个月的博士后奖学金。 Hurley博士将与应用物理系的Wright博士一起研究一个名为“半导体纳米结构中相干声子产生的量子动力学研究”的研究项目。" 拟议的研究是针对在半导体薄膜和纳米结构的相干声子产生的必要的基础研究。 在过去的三十年里，使用激光脉冲激发的晶格振动（声子）的光学产生和检测已被用于探测宏观和微观材料性质。 特别地，使用具有极窄时间轮廓（脉冲宽度~ 100 fs）的激光脉冲的超快产生已经用于研究半导体膜和纳米结构中的光激发非平衡载流子和声子传播的动力学。 尽管越来越多的兴趣，从许多团体在这一领域仍然有显着的差距，我们的知识声子产生和检测机制，在这些材料。 例如，直接带隙半导体样品中的超快产生机制，如单层GaAs，还没有实验研究。 这一基础工作将为研究纳米级电子或光电器件（如半导体激光器）中与热输运和载流子弛豫相关的几何结构中相干声子的产生和传播铺平道路。 ***

Hurley 9802624 This award supports a 12 month Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Dr. David Hurley at Hokkaido University in Sapporo, Japan. Dr. Hurley will work with Dr. Wright in the Department of Applied Physics on a research project entitled, "Investigation of Quantum Dynamics of Coherent Phonon Generation in Semiconductor Nanostructures." The proposed research is aimed at essential basic studies of the coherent phonon generation in semiconductor films and nanostructures. In the past thirty years, the optical generation and detection of lattice vibrations (phonons) using laser pulsed excitation has been utilized to probe macroscopic and microscopic material properties. In particular, ultrafast generation using laser pulses with extremely narrow temporal profiles (pulse width~100fs) has been used to study the dynamics of photo-excited non- equilibrium carriers and phonon propagation, in semiconductor film and nanostructures. Despite growing interest from many groups in this area there are still significant gaps in our knowledge of phonon generation and detection mechanisms in these materials. For example, the ultrafast generation mechanisms in direct band gap semiconductor samples, as basic as single layer GaAs, have not been studied experimentally. This groundwork will pave the way for the investigation of generation and propagation of coherent phonons in geometries relevant to heat transport and carrier relaxation in nanoscale electronics or optoelectronic devices such as semiconductor lasers. ***