JSPS Fellowship: Investigation of Quantum Dynamics of Coherent Phonon Generation in Semiconductor Nanos

赫尔利9802624该奖项支持日本科学促进会为戴维·赫尔利博士在日本札幌市北海道大学设立的为期12个月的博士后奖学金。赫尔利博士将与莱特博士在应用物理系合作开展一项研究项目，题为“半导体纳米结构中相干声子产生的量子动力学研究”。这项研究旨在对半导体薄膜和纳米结构中的相干声子产生进行必要的基础研究。在过去的三十年里，利用激光脉冲激发的光学产生和检测晶格振动(声子)来探测材料的宏观和微观性质。特别是利用时间分布极窄的激光脉冲(脉宽~100fs)产生超快脉冲，研究了半导体薄膜和纳米结构中光激非平衡载流子和声子传播的动力学。尽管许多小组对这一领域的兴趣与日俱增，但我们对这些材料中声子的产生和检测机制的了解仍然存在很大差距。例如，直接带隙半导体样品中的超快产生机制还没有被实验研究过，比如像单层GaAs这样的基本样品。这项工作将为研究纳米电子学或半导体激光器等光电子器件中与热输运和载流子弛豫有关的几何结构中相干声子的产生和传播铺平道路。***

Hurley 9802624 This award supports a 12 month Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Dr. David Hurley at Hokkaido University in Sapporo, Japan. Dr. Hurley will work with Dr. Wright in the Department of Applied Physics on a research project entitled, "Investigation of Quantum Dynamics of Coherent Phonon Generation in Semiconductor Nanostructures." The proposed research is aimed at essential basic studies of the coherent phonon generation in semiconductor films and nanostructures. In the past thirty years, the optical generation and detection of lattice vibrations (phonons) using laser pulsed excitation has been utilized to probe macroscopic and microscopic material properties. In particular, ultrafast generation using laser pulses with extremely narrow temporal profiles (pulse width~100fs) has been used to study the dynamics of photo-excited non- equilibrium carriers and phonon propagation, in semiconductor film and nanostructures. Despite growing interest from many groups in this area there are still significant gaps in our knowledge of phonon generation and detection mechanisms in these materials. For example, the ultrafast generation mechanisms in direct band gap semiconductor samples, as basic as single layer GaAs, have not been studied experimentally. This groundwork will pave the way for the investigation of generation and propagation of coherent phonons in geometries relevant to heat transport and carrier relaxation in nanoscale electronics or optoelectronic devices such as semiconductor lasers. ***