1998 Gordon Research Conference on Point Line Defects in Semiconductors, Colby-Sawyer College, New London, NH, July 12-17, 1998

1998 年戈登半导体点线缺陷研究会议，科尔比-索耶学院，新罕布什尔州新伦敦，1998 年 7 月 12-17 日

• 批准号: 9810094
• 负责人: Carlyle Storm
• 金额: $ 0.5万
• 依托单位: Gordon Research Conferences
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-05-15 至 1999-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9810094&HistoricalAwards=false
• 关键词: 1998; Gordon; Research; Conference; Point

9810094 Storm A Gordon Research Conference will be held July 12-17, 1998 on theoretical and experimental aspects of defects and defect- related phenomena in homogeneous and structured semiconductors, associated with growth and processing of electronic materials. Topics which are controversial and/or forward-looking will be emphasized. The program is organized around 20 invited speakers, 11 discussion leaders, a chair, vice-chair, and program committee; both contributed papers and posters are scheduled. Objectives are to stimulate communications among the broad community of researchers who address defects from a variety of disciplinary backgrounds--chemistry, physics, engineering and materials science, and to formulate and delineate critical research necessary to further basic understanding and move concepts closer to technological success. The conference is expected to provide an effective forum for discussion of critical scientific issues in the area of defects in semiconductors. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established between universities, research institutions, and industry. %%% An evaluation of the progress and status of defects and defect- related phenomena in semiconductors associated with growth and processing of electronic materials and device related structures along with current assessments of the most important developments in this field will be of great value to the understanding and enhanced utilization of materials in computing, data processing, and communications. ***

小行星9810094 戈登研究会议将于1998年7月12日至17日举行，讨论与电子材料生长和加工有关的均匀和结构半导体中的缺陷和与缺陷有关的现象的理论和实验方面。 具有争议性和/或前瞻性的主题将得到强调。该计划组织了大约20名特邀演讲者，11名讨论负责人，一名主席，一名副主席和一个计划委员会;计划安排了贡献的论文和海报。 目标是促进研究人员的广泛社区之间的沟通，他们解决来自各种学科背景的缺陷-化学，物理，工程和材料科学，并制定和描述必要的关键研究，以进一步基本理解和移动概念更接近技术成功。预计会议将为讨论半导体缺陷领域的关键科学问题提供一个有效的论坛。沿着评估该领域和未来方向的机会，预计大学、研究机构和工业界之间将建立新的联系。 %%% 对半导体中与电子材料和器件相关结构的生长和加工有关的缺陷和缺陷相关现象的进展和现状的评估，沿着对该领域最重要发展的当前评估，将对理解和提高材料在计算、数据处理和通信中的利用具有重要价值。 ***