U.S.-China Planning Visit: Research Cooperation with Shanghai Institute of Metallurgy in Thin Film SiC and AIN

美中计划访问：与上海冶金研究院在薄膜碳化硅和氮化铝方面的研究合作

• 批准号: 9814894
• 负责人: Dashen Shen
• 金额: $ 0.37万
• 依托单位: University of Alabama in Huntsville
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-08-01 至 2000-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9814894&HistoricalAwards=false
• 关键词: U.S.; China; Planning; Visit; Research

Shen9814894This award supports travel to China by Professor Dashen Shen, University of Alabama, to meet with counterpart Dr. Yu Yuehui of the Ion Beam Laboratory of the Shanghai Institute of Metallurgy in order to develop cooperative research activities in SiC and AlN thin films. The projects include synthesis and patterning of AlN films for application in field emission displays, and Silicon Carbide and its application in high temperature sensors and electronics. The Shanghai Institute of Metallurgy is one of the leading electronics institutes of the Chinese Academy of Sciences.

该奖项支持阿拉巴马大学沈大山教授来华与上海冶金研究所离子束实验室俞跃辉博士会面，开展SiC和AlN薄膜的合作研究活动。项目包括用于场发射显示器的氮化铝薄膜的合成和图像化，以及碳化硅及其在高温传感器和电子产品中的应用。上海冶金研究所是中国科学院主要的电子研究所之一。