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U.S.-China Cooperative Research: Novel Silicon-On-Insulator using Amorphous Aluminum Nitride and Amorphous Diamond as Insulating Layers

U.S.-China Cooperative Research: Novel Silicon-On-Insulator using Amorphous Aluminum Nitride and Amorphous Diamond as Insulating Layers
中美合作研究:采用非晶氮化铝和非晶金刚石作为绝缘层的新型绝缘体硅
批准号:
0004547
负责人:
Dashen Shen
金额:
$12.65万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-05-01 至 2005-05-31

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中文摘要
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英文摘要
0004547ShenThis is a three-year cooperative project between Dr. Dashan Shen, the University of Alabama and Professor Yu Yuehui, the Shanghai Institute of Metallurgy, Chinese Academy Science, to study novel Silicon-On-Insulator substrates using Amorphous Aluminum Nitride and Amorphous Diamond as Insulating Layers. This project will experiment using Amorphous Aluminum Nitride and Amorphous Diamond as an insulating layer on Silicon-on-insulator substrates to improve the thermal conductivity of integrated circuits (IC). This is important research in high power IC applications. Success in developing this technology can overcome the self-heating effect of the circuit due to the poor thermal conductivity and heat diffusion of the insulating layer. This proposal also provides an opportunity for a U.S. graduate student from an EPSCoR institute to work with one of the best Chinese research institutes in metallurgy. This proposal addresses an important scientific question and meets the NSF objective of human resource development. The Chinese Academy of Science and the NSF jointly support this project.
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U.S.-China Planning Visit: Research Cooperation with Shanghai Institute of Metallurgy in Thin Film SiC and AIN
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