U.S.-China Cooperative Research: Novel Silicon-On-Insulator using Amorphous Aluminum Nitride and Amorphous Diamond as Insulating Layers

中美合作研究：采用非晶氮化铝和非晶金刚石作为绝缘层的新型绝缘体硅

• 批准号: 0004547
• 负责人: Dashen Shen
• 金额: $ 12.65万
• 依托单位: University of Alabama in Huntsville
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-05-01 至 2005-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0004547&HistoricalAwards=false
• 关键词: U.S.; China; Cooperative; Research; Novel

0004547ShenThis is a three-year cooperative project between Dr. Dashan Shen, the University of Alabama and Professor Yu Yuehui, the Shanghai Institute of Metallurgy, Chinese Academy Science, to study novel Silicon-On-Insulator substrates using Amorphous Aluminum Nitride and Amorphous Diamond as Insulating Layers. This project will experiment using Amorphous Aluminum Nitride and Amorphous Diamond as an insulating layer on Silicon-on-insulator substrates to improve the thermal conductivity of integrated circuits (IC). This is important research in high power IC applications. Success in developing this technology can overcome the self-heating effect of the circuit due to the poor thermal conductivity and heat diffusion of the insulating layer. This proposal also provides an opportunity for a U.S. graduate student from an EPSCoR institute to work with one of the best Chinese research institutes in metallurgy. This proposal addresses an important scientific question and meets the NSF objective of human resource development. The Chinese Academy of Science and the NSF jointly support this project.

0004547沈这是一个为期三年的合作项目，由亚拉巴马大学的沈大山博士和中国科学院上海冶金研究所的余跃辉教授共同研究，以非晶氮化铝和非晶金刚石为绝缘层的新型绝缘体上硅衬底。本项目将实验使用非晶氮化铝和非晶金刚石作为绝缘体上硅衬底上的绝缘层，以提高集成电路（IC）的导热性。 这在大功率集成电路应用中具有重要意义。 该技术的成功开发可以克服由于绝缘层导热性和热扩散性差而导致的电路自热效应。 该项目还为来自EPSCoR研究所的美国研究生提供了与中国最好的冶金研究所合作的机会。 这一建议解决了一个重要的科学问题，并符合NSF的人力资源开发目标。中国科学院和美国国家科学基金会共同支持这个项目。