SBIR Phase I: Gas-Cluster Ion Source for Mass Spectrometer and Microelectronic Applications

SBIR 第一阶段：用于质谱仪和微电子应用的气体团簇离子源

• 批准号: 9861050
• 负责人: David Fenner
• 金额: $ 10万
• 依托单位: EPION CORPORATION
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9861050&HistoricalAwards=false
• 关键词: SBIR; Phase; Gas; Cluster; Ion

9891050 This Small Business Innovation Research (SBIR) Phase I project will evaluate the feasibility of developing gas-cluster ion-beam (GCIB) sputtering of semiconductor surfaces into innovative tools for electronic materials. This research will evaluate GCIB sputtering for secondary-ion mass spectrometer (SIMS) instruments. The overriding motivation for this R&D is the critical need in the semiconductor industry for techniques and methods which can etch in a highly uniform manner and thus facilitate accurate and sensitive depth measurements. Future generations of microelectronics must have ultra-shallow junction depths, higher doping levels and improvement in interface and doping abruptness to meet the 1997 SIA Roadmap. Dynamic SIMS is the most sensitive technique for analysis of semiconductors. State-of-the-art instruments employ energetic, monatomic ion beams to sputter the analytical surface. These roughen the surface and limit depth resolution. To achieve the required subnanometer depth resolutions in SIMS new sputter beams must be developed. GCIB methods with singly ionized argon or oxygen clusters (of 1,000) sputter with nearly atomic depth resolution, and high secondary-ion yields. Phase I will construct a prototype system to demonstrate analytical feasibility. Phase II will develop dedicated ion sources for critical analysis to provide depth profiling for SIMS, and Auger-electron and x-ray photoelectron spectroscopies. The proposed technology will enable analysis of next-generation semiconductor devices having much higher performance and enhance manufacturing yields. Epion is the first and only to manufacture GCIB systems. The basic GCIB technique will have a wide applicability to many areas of electronic materials processing and manufacturing industry.

9891050 这个小企业创新研究（SBIR）第一阶段项目将评估将半导体表面的气体团簇离子束（GCIB）溅射开发成电子材料创新工具的可行性。这项研究将评估GCIB溅射的二次离子质谱仪（西姆斯）仪器。该研发的首要动机是半导体工业中对能够以高度均匀的方式蚀刻并因此促进准确和灵敏的深度测量的技术和方法的迫切需要。未来几代微电子技术必须具有超浅的结深、更高的掺杂水平以及界面和掺杂不稳定性的改善，以满足1997年SIA路线图的要求。动态西姆斯是半导体分析中最灵敏的技术。最先进的仪器采用高能单原子离子束溅射分析表面。这些会使表面粗糙，并限制深度分辨率。为了在西姆斯中实现所需的亚纳米深度分辨率，必须开发新的溅射束。单离子化氩或氧团簇（1,000个）的GCIB方法具有接近原子深度的分辨率和高的二次离子产率。第一阶段将建立一个原型系统，以证明分析的可行性。第二阶段将开发用于关键分析的专用离子源，为西姆斯提供深度剖析，以及俄歇电子和X射线光电子能谱。 所提出的技术将能够分析具有更高性能的下一代半导体器件，并提高制造产量。Epion是第一家也是唯一一家生产GCIB系统的公司。GCIB基本技术在电子材料加工制造业的许多领域具有广泛的适用性。