SBIR Phase I: Low-Cost Monolithic Semiconductor Structures for Photovoltaic/Photoelectrolysis Splitting of Water for Hydrogen Generation

SBIR 第一阶段：用于光伏/光电解水分解制氢的低成本单片半导体结构

• 批准号: 9960490
• 负责人: Michael Mauk
• 金额: $ 9.45万
• 依托单位: AstroPower, Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-01-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9960490&HistoricalAwards=false
• 关键词: SBIR; Phase; Low; Cost; Monolithic

This Small Business Innovative Research Phase I Project will explore, demonstrate, and develop cost-effective designs and production technologies for semiconductor monolithic photovoltaic/photoelectrochemical (PV-PEC) devices for hydrogen production. This work is motivated by the recent report of a 12.5% efficient laboratory device made by metalorganic chemical vapor deposition on a single-crystal GaAs substrate. It is estimated that an order of magnitude cost reduction is necessary to make this technology economic. This approach is based on selective epitaxial growth of III-V compound semiconductors by simple closed-spaced vapor transport and solution growth processes on a large-grain polycrystalline silicon sheet material. Cells based on heteroepitaxy of GaAs, InP, InGaP and GaN on polycrystalline silicon will be evaluated. The simple structure of PV-PEC cells relative to other semiconductor devices such as transistors, photodiodes, lasers, and LEDs, makes the proposed selective epitaxy process especially advantageous in achieving high material quality at low cost with high-throughput processing. This approach will yield the needed cost reductions without significantly sacrificing performance.This is a moderate- to high-risk payoff project that seeks an economically viable, clean, renewable process for hydrogen generation.

这个小型企业创新研究第一阶段项目将探索，展示和开发用于制氢的半导体单片光伏/光电化学（PV-PEC）设备的成本效益设计和生产技术。 这项工作的动机是最近的报告，12.5%的效率实验室设备上的单晶GaAs衬底上的金属有机化学气相沉积。 据估计，一个数量级的成本降低是必要的，使这项技术的经济。 这种方法是基于III-V族化合物半导体的选择性外延生长，通过简单的封闭空间的气相传输和溶液生长过程上的大晶粒多晶硅片材料。 将评估基于GaAs、InP、InGaP和GaN在多晶硅上的异质外延的电池。 PV-PEC电池相对于其他半导体器件（例如晶体管、光电二极管、激光器和LED）的简单结构使得所提出的选择性外延工艺在以低成本实现高材料质量和高产量处理方面特别有利。 这种方法将在不显著牺牲性能的情况下降低所需的成本。这是一个中等风险到高风险的回报项目，旨在寻求经济可行的、清洁的、可再生的制氢工艺。