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SBIR Phase I: Low-Cost Monolithic Semiconductor Structures for Photovoltaic/Photoelectrolysis Splitting of Water for Hydrogen Generation

SBIR Phase I: Low-Cost Monolithic Semiconductor Structures for Photovoltaic/Photoelectrolysis Splitting of Water for Hydrogen Generation
SBIR 第一阶段:用于光伏/光电解水分解制氢的低成本单片半导体结构
批准号:
9960490
负责人:
Michael Mauk
金额:
$9.45万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-01-01 至 2000-06-30

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中文摘要
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英文摘要
This Small Business Innovative Research Phase I Project will explore, demonstrate, and develop cost-effective designs and production technologies for semiconductor monolithic photovoltaic/photoelectrochemical (PV-PEC) devices for hydrogen production. This work is motivated by the recent report of a 12.5% efficient laboratory device made by metalorganic chemical vapor deposition on a single-crystal GaAs substrate. It is estimated that an order of magnitude cost reduction is necessary to make this technology economic. This approach is based on selective epitaxial growth of III-V compound semiconductors by simple closed-spaced vapor transport and solution growth processes on a large-grain polycrystalline silicon sheet material. Cells based on heteroepitaxy of GaAs, InP, InGaP and GaN on polycrystalline silicon will be evaluated. The simple structure of PV-PEC cells relative to other semiconductor devices such as transistors, photodiodes, lasers, and LEDs, makes the proposed selective epitaxy process especially advantageous in achieving high material quality at low cost with high-throughput processing. This approach will yield the needed cost reductions without significantly sacrificing performance.This is a moderate- to high-risk payoff project that seeks an economically viable, clean, renewable process for hydrogen generation.
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国内基金
海外基金
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