Conformal Heteroepitaxy of GaAs and InP on Silicon and Sapphire Substrates

GaAs 和 InP 在硅和蓝宝石衬底上的共形异质外延

• 批准号: 9060697
• 负责人: Michael Mauk
• 金额: $ 5万
• 依托单位: AstroPower, Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-01-01 至 1991-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9060697&HistoricalAwards=false
• 关键词: Conformal; Heteroepitaxy; GaAs; InP; Silicon

Conformal Vapor Phase Epitaxy (CVPE) is a new technique for two-dimensional constrained growth of thin semiconductor films using a halide vapor transport process. This technique will be applied to the growth of GaAs and InP films on silicon and sapphire substrates. Epitaxial-lateral overgrowth with high aspect ratios is achieved by confining growth to a thin void space bounded by an oxide-mask coating the substrate and an adjacent overhanging mask. This technique has excellent potential for reducing the detrimental effects of lattice-mismatch and thermal stress to yield low-defect heteroepitaxial films. The feasibility of CVPE for GaAs-on-silicon, GaAs-on-sapphire, InP-on-silicon, and InP-on- sapphire will be studied with experimental emphasis on GaAs-on-silicon. Heteroepitaxial materials will be characterized and minority carrier devices, such as photodetectors and LEDs, fabricated with the heteroepitaxial films, will be evaluated.

共形气相外延（CVPE）是一种新的 二维约束生长技术 使用卤化物蒸气的半导体薄膜 运输过程。 这项技术将应用于 在硅上生长GaAs和InP薄膜， 蓝宝石衬底。 外延-横向过生长 通过将生长限制在 由氧化物掩模涂层限定的薄空隙空间 所述衬底和相邻的悬伸掩模。 这项技术具有很好的潜力， 晶格失配的不利影响， 产生低缺陷异质外延的热应力 薄膜. CVPE用于硅基GaAs的可行性， 蓝宝石上GaAs、硅上InP和硅上InP 蓝宝石的研究将侧重于实验 硅基砷化镓 异质外延材料将是 特征和少数载流子器件，例如 光电探测器和发光二极管，制造与 异质外延膜，将被评估。