STTR Phase I: An Advanced Microstructural Process for SiC Structures and Devices

STTR 第一阶段：SiC 结构和器件的先进微结构工艺

• 批准号: 9961397
• 负责人: McDonald Robinson
• 金额: $ 10万
• 依托单位: Lawrence Semiconductor Research Laboratory, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-01-01 至 2001-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9961397&HistoricalAwards=false
• 关键词: STTR; Phase; Advanced; Microstructural; Process

This Small Business Technology Transfer Phase I project will develop a silicon carbide (SiC) process technology that will permit control of both the microstructure and macrostructure during the SiC deposition process. This will be done by combining a rapid chemical vapor deposition technique using organosilicon sources combined with a transfer mold technique. Patterned and etched silicon substrates will be used as templates. This approach will enable the growth of three-dimensional SiC structures for advanced microelectromechanical structures (MEMS) and vacuum microelectronic (VME) devices with greater functionality and durability. This microstructural engineering process, if successful, will be applied to the development of SiC components such as gyroscopes, heat engines, nozzles, and sensors for MEMS applications and flat panel displays and RF microwave amplifiers for harsh environments.

该小企业技术转让第一阶段项目将开发一种碳化硅（SiC）工艺技术，该技术将允许在SiC沉积过程中控制微观结构和宏观结构。这将通过将使用有机硅源的快速化学气相沉积技术与传递模塑技术相结合来完成。 图案化和蚀刻的硅衬底将被用作模板。这种方法将使三维SiC结构的生长，先进的微机电结构（MEMS）和真空微电子（VME）设备具有更大的功能和耐用性。如果成功，这种微结构工程工艺将应用于SiC组件的开发，如陀螺仪，热机，喷嘴和MEMS应用的传感器以及平板显示器和恶劣环境下的RF微波放大器。