STTR Phase I: An Advanced Microstructural Process for SiC Structures and Devices

这个小型企业技术转移第一阶段项目将开发一种碳化硅(SIC)处理技术，该技术将允许在碳化硅沉积过程中控制微结构和宏观结构。这将通过结合使用有机硅源的快速化学气相沉积技术和转移模具技术来实现。图案化和蚀刻的硅衬底将被用作模板。这种方法将使三维碳化硅结构的生长具有更强的功能性和耐用性，用于先进的微电子机械结构(MEMS)和真空微电子(VME)器件。如果成功，这种微结构工程工艺将被应用于碳化硅部件的开发，如陀螺仪、热机、喷嘴和用于MEMS应用的传感器，以及用于恶劣环境的平板显示器和射频微波放大器。

This Small Business Technology Transfer Phase I project will develop a silicon carbide (SiC) process technology that will permit control of both the microstructure and macrostructure during the SiC deposition process. This will be done by combining a rapid chemical vapor deposition technique using organosilicon sources combined with a transfer mold technique. Patterned and etched silicon substrates will be used as templates. This approach will enable the growth of three-dimensional SiC structures for advanced microelectromechanical structures (MEMS) and vacuum microelectronic (VME) devices with greater functionality and durability. This microstructural engineering process, if successful, will be applied to the development of SiC components such as gyroscopes, heat engines, nozzles, and sensors for MEMS applications and flat panel displays and RF microwave amplifiers for harsh environments.