Growth of Epitaxial Oxide Films on Silicon

该研究的目标是通过在特高压真空系统中激光烧蚀高质量的绝缘氧化物薄膜，在加热的单晶硅衬底上进行外延生长，然后在绝缘氧化物上进行CVD外延生长。根据最近的报道，MgO在硅和砷化镓上、CeO2在硅上、PrO2在硅上成功地外延生长，我们建议将MgO、CeO2和PrO2作为候选外延绝缘层。虽然一个成功的过程将开辟许多应用，但这项工作的目标是实现绝缘体外延生长的绝缘体上硅结构。或者，外延氧化膜可以为键合并蚀刻回绝缘体上的硅工艺提供高度选择性的蚀刻停止。

The goal of the proposed research is to demonstrate epitaxial growth, by laser ablation in a UHV vacuum system of high quality, insulating oxide films onto heated single crystal silicon substrates, followed by CVD epitaxial growth of silicon onto the insulating oxide. Based on recent reports of successful epitaxial growth of MgO on silicon and gallium arsenide, CeO2 on silicon, and PrO2 on silicon, we propose to focus on MgO, CeO2, and PrO2 as the candidate epitaxial insulating layers. Although a successful process would open up many applications, the goal for this work is to enable a silicon-on-insulator structure in which the insulator is grown epitaxially. Alternatively, the epitaxial oxide film may provide a highly selective etch stop for a bond-and-etch-back silicon-on-insulator process.