Defect Reactions Near Surfaces During Low-Energy Ion Implantation

低能离子注入过程中表面附近的缺陷反应

• 批准号: 9986160
• 负责人: David Cahill
• 金额: $ 38.46万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-02-01 至 2004-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9986160&HistoricalAwards=false
• 关键词: Defect; Reactions; Near; Surfaces; During

This project will investigate low energy ion irradiation effects and defect interactions in near surface regions of semiconductors with the use of STM, grazing incidence x-ray diffuse scattering, and computational modeling. The objective of the project is to establish a greater understanding of defect reactions near surfaces during low-energy ion implantation. The approach is to utilize tunneling microscopy (STM), x-ray scattering (DXS) methods, and computational modeling. This combination of experimental techniques will enable observation of defects and defect structure developing at the surface as well as just below it. Computational modeling will be used to calculate the initial damage states of the surface and near-surface region for analysis of the DXS data, and as an aid in interpreting the STM data.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

本计画将利用扫描隧道显微镜、掠入射X射线漫散射及计算模拟，探讨半导体近表面区域的低能离子辐照效应与缺陷交互作用。该项目的目标是建立一个更好的理解在低能离子注入过程中的表面附近的缺陷反应。该方法是利用隧道显微镜（STM），X射线散射（DXS）的方法，和计算建模。这种实验技术的结合将使观察缺陷和缺陷结构的发展在表面以及它下面。计算建模将用于计算表面和近表面区域的初始损伤状态，用于分析DXS数据，并作为解释STM数据的辅助手段。%该项目涉及材料科学专题领域的基础研究问题，具有很高的潜在技术相关性。该研究将为电子设备的新理解和能力提供基础材料科学知识。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。 ***