Defect Reactions Near Surfaces During Low-Energy Ion Implantation

本项目将利用STM、掠入射x射线漫射散射和计算模型研究半导体近表面区域的低能离子辐照效应和缺陷相互作用。该项目的目标是在低能离子注入过程中对表面附近的缺陷反应有更深入的了解。该方法是利用隧道显微镜（STM）、x射线散射（DXS）方法和计算建模。这种实验技术的结合将使观察缺陷和缺陷结构在表面及其下方发展成为可能。计算建模将用于计算地表和近地表区域的初始损伤状态，用于分析DXS数据，并作为解释STM数据的辅助手段。该项目涉及具有高潜在技术相关性的材料科学主题领域的基础研究问题。该研究将在基础水平上为电子器件的新理解和能力贡献基础材料科学知识。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。* * *

This project will investigate low energy ion irradiation effects and defect interactions in near surface regions of semiconductors with the use of STM, grazing incidence x-ray diffuse scattering, and computational modeling. The objective of the project is to establish a greater understanding of defect reactions near surfaces during low-energy ion implantation. The approach is to utilize tunneling microscopy (STM), x-ray scattering (DXS) methods, and computational modeling. This combination of experimental techniques will enable observation of defects and defect structure developing at the surface as well as just below it. Computational modeling will be used to calculate the initial damage states of the surface and near-surface region for analysis of the DXS data, and as an aid in interpreting the STM data.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***