Defect Reactions Near Surfaces During Low-Energy Ion Implantation

低能离子注入过程中表面附近的缺陷反应

• 批准号: 9986160
• 负责人: David Cahill
• 金额: $ 38.46万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-02-01 至 2004-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9986160&HistoricalAwards=false
• 关键词: Defect; Reactions; Near; Surfaces; During

This project will investigate low energy ion irradiation effects and defect interactions in near surface regions of semiconductors with the use of STM, grazing incidence x-ray diffuse scattering, and computational modeling. The objective of the project is to establish a greater understanding of defect reactions near surfaces during low-energy ion implantation. The approach is to utilize tunneling microscopy (STM), x-ray scattering (DXS) methods, and computational modeling. This combination of experimental techniques will enable observation of defects and defect structure developing at the surface as well as just below it. Computational modeling will be used to calculate the initial damage states of the surface and near-surface region for analysis of the DXS data, and as an aid in interpreting the STM data.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

该项目将通过使用STM，放牧发动机X射线扩散散射和计算建模的半导体近表面区域的低能离子辐照效应和缺陷相互作用。该项目的目的是在低能离子植入期间对表面附近的缺陷反应建立更多的了解。该方法是利用隧道显微镜（STM），X射线散射（DXS）方法和计算建模。实验技术的这种组合将使在表面以及在其下方发展的缺陷和缺陷结构的观察。计算建模将用于计算表面和近表面区域的初始损害状态，以分析DXS数据，并有助于解释STM数据。%% %%该项目解决具有高潜在技术相关性的材料科学领域的基础研究问题。该研究将在基本层面上为电子设备的新理解和能力提供基本材料的知识。该计划的一个重要特征是通过培训学生在根本和技术意义上的领域中培训研究和教育。 ***