Defect Reactions Near Surfaces During Low-Energy Ion Implantation

该项目将利用扫描隧道显微镜、掠入射X射线扩散散射和计算模型来研究半导体近表面区域的低能离子辐照效应和缺陷相互作用。该项目的目标是更好地了解低能离子注入过程中表面附近的缺陷反应。方法是利用隧道显微镜(STM)、X射线散射(DXS)方法和计算模型。这种实验技术的结合将使人们能够观察到表面和下面的缺陷和缺陷结构的发展。计算模型将被用来计算表面和近表面区域的初始损伤状态，用于分析DXS数据，并作为解释STM数据的辅助。%该项目解决具有高潜在技术相关性的材料科学主题领域的基础研究问题。这项研究将在基础水平上为电子设备的新理解和能力贡献基本材料科学知识。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

This project will investigate low energy ion irradiation effects and defect interactions in near surface regions of semiconductors with the use of STM, grazing incidence x-ray diffuse scattering, and computational modeling. The objective of the project is to establish a greater understanding of defect reactions near surfaces during low-energy ion implantation. The approach is to utilize tunneling microscopy (STM), x-ray scattering (DXS) methods, and computational modeling. This combination of experimental techniques will enable observation of defects and defect structure developing at the surface as well as just below it. Computational modeling will be used to calculate the initial damage states of the surface and near-surface region for analysis of the DXS data, and as an aid in interpreting the STM data.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***