Electronic Structure Engineering of Antimony-based Optoelectronic Devices

锑基光电器件电子结构工程

• 批准号: 0000556
• 负责人: Michael Flatte
• 金额: $ 24万
• 依托单位: University of Iowa
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-09-15 至 2003-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0000556&HistoricalAwards=false
• 关键词: Electronic; Structure; Engineering; Antimony; based

Flatte'0000556The PI presents here a coherent theoretical program investigating the optoelectronic properties of antimony-based heterostructures. Great flexibility has already been demonstrated in the design of optoelectronic devices which use materials based on the (roughly) lattice matched AlGaSb/InAs material system. Such materials have been used in mid-wave infrared (MWIR) lasers, long-wave infrared (LWIR) detectors, and resonant interband tunneling diodes (RITD's). These MWIR and LWIR lasers and detectors have broad spectroscopic applications to environmental monitoring and non-invasive medical sensing. RITD's, which have the largest peak to valley current ratios of any RTD devices, are intended for use in a variety of microwave and fast digital device applications.For each type of device the expected properties of antimony-based heterostructures are superior to those of competing systems. Current barriers to the realization of these superior properties are: (1) maturation of growth and processing technology, (2) detailed experimental probes of the material properties of device elements, and (3) theoretical understanding and modeling of materials and devices. The wide range of choices and applications of antimony-based heterostructures has made efforts in this last category vital to further progress in the field. In the proposed effort progress in understanding the properties of materials and devices, and in designing better devices, will be accomplished principally through efforts to (1) develop appropriate and accurate transport models, (2) improve the accuracy of the electronic structure models currently used, and (3) account for interface chemistry and structure in this mixed-anion system. The P.I.'s have been engaged in the past in several collaborative efforts with non-academic institutions, including industrial and government laboratories, and they are committed to continuing these efforts in the future. Specifically, the RITD effort will be coordinated with efforts at HRL and JPL, and the interface modeling effort at HRL.

Flatte'0000556 PI在此提出了研究锑基异质结构的光电性质的相干理论程序。 在使用基于（大致）晶格匹配的AlGaSb/InAs材料系统的材料的光电器件的设计中已经证明了极大的灵活性。 这种材料已用于中波红外（MWIR）激光器、长波红外（LWIR）探测器和共振带间隧穿二极管（RITD）。这些MWIR和LWIR激光器和探测器在环境监测和非侵入式医疗传感方面具有广泛的光谱应用。RITD器件具有RTD器件中最大的峰谷电流比，适用于各种微波和快速数字器件应用。对于每种类型的器件，锑基异质结构的预期性能都上级竞争系统。 目前实现这些上级特性的障碍是：（1）生长和加工技术的成熟，（2）器件元件的材料特性的详细实验探测，以及（3）材料和器件的理论理解和建模。锑基异质结构的广泛选择和应用使得在最后一类中的努力对于该领域的进一步进展至关重要。 在所提出的努力中，在理解材料和器件的性质以及设计更好的器件方面的进展将主要通过以下努力来实现：（1）开发适当和准确的输运模型，（2）提高目前使用的电子结构模型的准确性，以及（3）解释该混合阴离子系统中的界面化学和结构。私家侦探过去，他们曾与非学术机构（包括工业和政府实验室）进行过多次合作，并致力于在未来继续这些努力。具体来说，RITD的工作将与HRL和JPL的工作以及HRL的接口建模工作相协调。