US-India Cooperative Research: Fundamental Study of Ultrathin Gate Dielectrics for Nanoelectronics

该奖项支持美印合作研究：纳米电子学超薄栅极介电体的基础研究。美国克莱姆森大学PI Rajendra Singh和印度合作者Samares Kar，印度理工学院（IIT），坎普尔将进行金属氧化物硅场效应晶体管（mosfet）的基础研究。他们的研究将集中在双栅介电材料上，这是超薄栅介电材料面临的最重要问题之一。该结果有望增加我们对超薄栅极介质可靠性的理解，并有助于开发未来几代mosfet和集成电路的技术。研究范围：本研究与硅超大规模集成电路（VLSI）技术的持续发展密切相关。它将为纳米级mosfet超薄栅绝缘体薄膜的制造提供先进的知识。此外，它支持美国VLSI行业的目标，即到2010年生产具有纳米级器件特征的复杂电路。pi是期刊、会议和研讨会的积极贡献者，因此他们的工作成果应该受到广泛关注。这一努力将加强美国和印度科学家之间的合作，并支持与印度首屈一指的技术机构之一建立联系。

0002125Singh Description: This award supports US-India Cooperative Research: Fundamental Study of Ultrathin Gate Dielectrics for Nanoelectronics. US PI Rajendra Singh, Clemson University and Indian collaborator, Samares Kar, Indian Institute of Technology (IIT), Kanpur will conduct basic research on metal-oxide silicon field-effect transistors (MOSFETs). Their study will focus on two-gate dielectric materials, one of the most important issues facing ultrathin gate dielectrics. The results are expected to add to our understanding of the reliability of ultrathin gate dielectrics and to be useful in developing the technology for future generations of MOSFETs and integrated circuits.Scope: This research is highly relevant to the continued advancement of silicon Very Large Scale Integrated (VLSI) circuits technology. It should contribute advanced knowledge in the fabrication of ultrathin gate insulator films for nanoscale MOSFETs. Additionally, it supports the aim of the US VLSI industry, which is to produce complex circuits with nanoscale device features by 2010. The PIs are active contributors to journals, conferences and workshops, so the results of their work should receive broad attention. This effort will enhance collaboration between US and Indian scientists and support a linkage with one of India's premier institutes of technology.