US-India Cooperative Research: Fundamental Study of Ultrathin Gate Dielectrics for Nanoelectronics

美印合作研究：纳米电子学超薄栅极电介质的基础研究

• 批准号: 0002125
• 负责人: Rajendra Singh
• 金额: $ 5.06万
• 依托单位: Clemson University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-08-01 至 2004-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0002125&HistoricalAwards=false
• 关键词: US; India; Cooperative; Research; Fundamental

0002125Singh Description: This award supports US-India Cooperative Research: Fundamental Study of Ultrathin Gate Dielectrics for Nanoelectronics. US PI Rajendra Singh, Clemson University and Indian collaborator, Samares Kar, Indian Institute of Technology (IIT), Kanpur will conduct basic research on metal-oxide silicon field-effect transistors (MOSFETs). Their study will focus on two-gate dielectric materials, one of the most important issues facing ultrathin gate dielectrics. The results are expected to add to our understanding of the reliability of ultrathin gate dielectrics and to be useful in developing the technology for future generations of MOSFETs and integrated circuits.Scope: This research is highly relevant to the continued advancement of silicon Very Large Scale Integrated (VLSI) circuits technology. It should contribute advanced knowledge in the fabrication of ultrathin gate insulator films for nanoscale MOSFETs. Additionally, it supports the aim of the US VLSI industry, which is to produce complex circuits with nanoscale device features by 2010. The PIs are active contributors to journals, conferences and workshops, so the results of their work should receive broad attention. This effort will enhance collaboration between US and Indian scientists and support a linkage with one of India's premier institutes of technology.

0002125 Singh描述：该奖项支持美国-印度合作研究：纳米电子学超薄栅极电介质的基础研究。 克莱姆森大学的美国PI Rajendra Singh和印度合作者，坎普尔的印度理工学院（IIT）的Samares Kar将进行金属氧化物硅场效应晶体管（MOSFET）的基础研究。 他们的研究将集中在双栅电介质材料上，这是双栅电介质面临的最重要的问题之一。 结果预计将增加我们的理解的可靠性的MOSFET和集成circuits.Scope的未来几代的发展技术是有用的：这项研究是高度相关的硅超大规模集成电路（VLSI）技术的持续进步。 这将有助于先进的知识，在纳米MOSFET的栅绝缘膜的制造。 此外，它支持美国超大规模集成电路行业的目标，即到2010年生产具有纳米级器件功能的复杂电路。 PI是期刊、会议和研讨会的积极贡献者，因此他们的工作成果应得到广泛关注。 这一努力将加强美国和印度科学家之间的合作，并支持与印度最重要的技术研究所之一的联系。