2000 Gordon Conference on Point and Line Defects in Semiconductors, New London, NH, July 9-14, 2000

戈登研究会议将于2000年7月9日至14日举行，主题是与电子材料的生长和加工有关的均匀和结构半导体中的缺陷和缺陷相关现象。将强调具有争议性和/或前瞻性的主题。该计划是围绕受邀演讲者，讨论领袖，主席，副主席和计划委员会组织的；投稿论文和海报均已安排。目标是促进来自不同学科背景（化学、物理、工程和材料科学）的研究人员之间的交流，并制定和描述进一步基本理解和推动概念更接近技术成功所必需的关键研究。会议预计将为讨论半导体缺陷领域的关键科学问题提供一个有效的论坛。除了有机会评估该领域和未来方向外，预计还将在大学、研究机构和产业界之间建立新的联系。对半导体中与电子材料和器件相关结构的生长和加工有关的缺陷和缺陷相关现象的进展和现状进行评估，以及对该领域最重要发展的当前评估，将对理解和增强材料在计算、数据处理和通信中的利用具有重要价值。＊＊＊

A Gordon Research Conference will be held July 9-14, 2000 on defects and defect-related phenomena in homogeneous and structured semiconductors, associated with growth and processing of electronic materials. Topics which are controversial and/or forward-looking will be emphasized. The program is organized around invited speakers, discussion leaders, a chair, vice-chair, and program committee; both contributed papers and posters are scheduled. Objectives are to stimulate communications among the broad community of researchers who address defects from a variety of disciplinary backgrounds--chemistry, physics, engineering and materials science, and to formulate and delineate critical research necessary to further basic understanding and move concepts closer to technological success. The conference is expected to provide an effective forum for discussion of critical scientific issues in the area of defects in semiconductors. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established between universities, research institutions, and industry. %%% An evaluation of the progress and status of defects and defect-related phenomena in semiconductors associated with growth and processing of electronic materials and device related structures along with current assessments of the most important developments in this field will be of great value to the understanding and enhanced utilization of materials in computing, data processing, and communications. ***