Diffusion Time Resolved Ion Micro Beam Induced Charge Collection in Integrated Circuits

随着半导体技术追求更高的电路密度、更高的带宽和更低的功率要求，电路元件对电离辐射具有更高的敏感性。 自从发现来自宇宙射线的放射性中子和来自芯片封装材料的α粒子会产生电子扰乱以来，人们已经进行了大量的设计工作，以使电子设备对电离辐射不那么敏感。 免疫“软错误”或单粒子翻转（SEU）被列为1997年国家技术路线图的要求，半导体工业协会在美国准备的半导体本研究项目的目的是进行广泛的实验，理论建模和计算机模拟研究的物理过程中的单粒子翻转（SEU）现象的原型先进的IC器件。 所有的部分都在北德克萨斯大学（UNT）完成了拟议的研究，包括（1）完成聚焦，扫描，重离子微探针，（2）建立一个广泛的用户设施，（3）确定一个工业合作伙伴，已作出承诺的电荷扩散和收集测量和模拟研究。

As semiconductor technology strives for higher circuit densities, higher bandwidths, and lower power requirements, circuit elements have a higher susceptibility to ionizing radiation. Since the discovery that spallation neutrons from cosmic rays and alpha particles from chip packaging materials produce electronic upsets, extensive design efforts have been undertaken to make electronic devices less sensitive to ionizing radiation. Immunity to "soft errors" or Single Event Upsets (SEU) is listed as a requirement in the 1997 National Technology Roadmap for Semiconductors prepared by the Semiconductor Industry Association in the U.S. The aim of this research project is to undertake extensive experimental, theoretical modeling, and computer simulation studies of the physical processes underlying Single Event Upset (SEU) phenomena in prototype advanced IC devices. All of the pieces are in place at the University of North Texas (UNT) to accomplish the proposed research including (1) the completion of the focused, scanning, heavy-ion microprobe, (2) establishment of an extensive user's facility, and (3) identification of an industrial partner that has made a commitment to the charge diffusion and collection measurements and simulation research.