SBIR Phase I: Photonic Crystal Defect Cavity Enhanced Photodetector

SBIR 第一阶段：光子晶体缺陷腔增强型光电探测器

• 批准号: 0109578
• 负责人: Hongwei Xu
• 金额: $ 10万
• 依托单位: NANOSCIENCES CORP
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-07-01 至 2001-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0109578&HistoricalAwards=false
• 关键词: SBIR; Phase; Photonic; Crystal; Defect

This Small Business Innovative Research (SBIR) Phase I project will develop a novel photonic crystal defect cavity enhanced photodetector with wavelength selectivity, fast response speed, and low noise. By introducing photonic crystals into the design of a cavity enhanced photodetector, the problems associated with lattice matched reflector growth, low refractive index contrast, and heterojunction charge accumulation will be avoided. The photonic crystal defect cavity enhanced photodetector will be easy to fabricate and have superior performance compared with traditional detectors. The design can be expanded to photodetector arrays in many materials systems. Phase I will investigate the fabrication of photonic crystal defect cavity, characterize the photonic crystal band structure, and test p-i -n photodetector structures. Phase II would produce the prototype photodetector devices and optimize their performance. Novel products utilizing a photonic crystal defect cavity enhanced photodetector are anticipated in optical communications and telecommunications. Since silicon (Si)-based photodetectors can be easily incorporated into Si-based integrated circuits, there will be immediate commercial application to the telecommunications industry. There is also long term potential application in imaging and optical communications.

这个小型企业创新研究（SBIR）第一阶段项目将开发一种新型的光子晶体缺陷腔增强型光电探测器，具有波长选择性，快速响应速度和低噪声。 通过将光子晶体引入到腔增强型光电探测器的设计中，将避免与晶格匹配反射器生长、低折射率对比度和异质结电荷积累相关联的问题。 光子晶体缺陷腔增强型光电探测器与传统的光电探测器相比，具有制作简单、性能上级等优点。 该设计可以扩展到许多材料系统中的光电探测器阵列。 第一阶段将研究光子晶体缺陷腔的制作，表征光子晶体能带结构，并测试p-i -n光电探测器结构。第二阶段将生产原型光电探测器设备并优化其性能。利用光子晶体缺陷腔增强型光电探测器的新产品有望用于光通信和电信。 由于硅基光电探测器可以很容易地集成到硅基集成电路中，因此将立即在电信行业中得到商业应用。 在成像和光通信方面也有长期的潜在应用。