FOR 653: Active and Tuneable Microphotonic Systems Based on Silicon-On-Insulator (SOI)

十多年来，硅光子学一直是集成光学的一个有吸引力的部分。近年来出现了特别迅速的增长（例如，参见G.T. Reed：《硅的光学时代》，发表于2004年的《自然》杂志）。从中期来看，绝缘体上硅光子学（SOI光子学）与微电子技术过程的完全兼容性为实现电子和光子元件在共同衬底上的高度紧凑集成开辟了道路。SOI波导的高折射率对比度保证了极小曲率半径和非常紧凑的元件的可行性，波导损耗低至0.1 dB/cm以下。硅的基本材料特性是其从近红外到中红外的广泛透明光谱范围以及对光子晶体结构的优异适用性。最近文献报道的进展指出，SOI技术将在未来作为集成光学平台建立的前景。

For more than one decade silicon photonics has been an attractive part of Integrated Optics. A particularly rapid growth took place in recent years (see, e.g., G.T. Reed: "The optical age of silicon", in Nature, 2004). The full compatibility of silicon-on-insulator photonics (SOI photonics) with the technological processes of microelectronics opens, in the medium-term, the way to achieve a highly compact integration of electronic and photonic components on a common substrate. The high index contrast of SOI waveguides promises the feasibility of extremely small radii of curvature and very compact components with low waveguide loss down to less than 0.1 dB/cm. Essential material properties of silicon are its broad transparent spectral range from the near infrared range up to the mid-infrared as well as its excellent suitability for photonic crystal structures. Recent progress reported in literature points to the prospect that SOI technology will be established in the future as a platform for Integrated Optics.