SGER: Nonlithographic Nanoelectronic Device Integration for RF Circuit Design

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Das0115139As traditional integrated circuit technology reaches both physical and economic limits, nanotechnology is increasingly being viewed as an enabling technology to complement the next generation of electronic devices. The objective of this project is to identify barrier issues associated with the integration of nonlithographic nanostructure fabrication technologies and RF integrated circuits. This will be accomplished through an experimental investigation of the effects of an electrochemical nanostructure fabrication technique on the performance of an RF transceiver circuit fabricated using standard CMOS and SiGe technology. The results of this investigation will help identify technological issues which must be addressed for the integration of nonlithographic nanostructrues within RF circuit designs.