A Novel Technique for Fabricating Semiconductor Quantum Dot Arrays on Silicon

一种在硅上制造半导体量子点阵列的新技术

• 批准号: 9521729
• 负责人: Biswajit Das
• 金额: $ 4.97万
• 依托单位: West Virginia University Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-08-15 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9521729&HistoricalAwards=false
• 关键词: Novel; Technique; Fabricating; Semiconductor; Quantum

9521729 Das Semiconductor quantum dots have novel optical and electronic properties that can lead to high speed photonic and electronic devices with superior performances. For room temperature applications, it is necessary to restrict the dimensions of such quantum dots to below 200 A so that the energy separation due to quantization is greater than the thermal broadening. Conventional nanofabrication techniques of using electron beam lithography and reactive ion techniques, where the semiconductor material is synthesized in the size and the shape of the nanostructure, are more appropriate for such devices. Current nanogrowth techniques suffer from the problem of large device size distribution and lack of device periodicity. This project proposes to develop a novel low cost nanogrowth technology for the fabrication of periodic arrays of semiconductor quantum dots on silicon with good device size uniformity. The technique utilizes material growth on a preformed template formed by electrochemical etching of aluminum on silicon. The template contains a periodic array of pores in which the semiconductor material is synthesized. The technique is inexpensive, reliable, suitable for the fabrication of a variety of semiconductors, VSL compatible and has the potential for integration of quantum dot services with silicon integrated circuits. The proposed technology is also suitable for large scale commercial production of semiconductor quantum dot arrays. ***

9521729 Das半导体量子点具有新颖的光学和电子性质，可以导致具有上级性能的高速光子和电子器件。 对于室温应用，有必要将这种量子点的尺寸限制在200 A以下，使得由于量子化引起的能量分离大于热展宽。 使用电子束光刻和反应离子技术的常规纳米制造技术（其中半导体材料以纳米结构的尺寸和形状合成）更适合于这种器件。 目前的纳米生长技术存在器件尺寸分布大和器件周期性缺乏的问题。 本计画提出发展一种新颖的低成本奈米成长技术，以在矽上制造具有良好尺寸均匀性的半导体量子点周期性阵列。 该技术利用在通过电化学蚀刻硅上的铝形成的预成型模板上进行材料生长。该模板包含周期性排列的孔，在其中合成半导体材料。 该技术价格低廉，可靠，适用于制造各种半导体，VSL兼容，并具有将量子点服务与硅集成电路集成的潜力。 所提出的技术也适用于半导体量子点阵列的大规模商业生产。 ***