A Novel Technique for Fabricating Semiconductor Quantum Dot Arrays on Silicon

9521729个Das半导体量子点具有新颖的光学和电学性质，可以制造出性能优越的高速光子和电子器件。对于室温应用，必须将这种量子点的尺寸限制在200A以下，以便量子化引起的能量分离大于热展宽。传统的纳米制造技术使用电子束光刻和反应离子技术，其中半导体材料是以纳米结构的大小和形状合成的，更适合于这样的器件。目前的纳米生长技术存在器件尺寸分布大、器件周期短的问题。该项目提出了一种新的低成本纳米生长技术，用于在硅上制备具有良好尺寸均匀度的半导体量子点周期阵列。该技术利用通过在硅上电化学刻蚀铝而形成的预制模板上的材料生长。模板包含周期性的孔阵列，在其中合成半导体材料。该技术廉价、可靠，适用于各种半导体的制造，与VSL兼容，并具有将量子点服务与硅集成电路集成的潜力。该技术也适用于大规模的半导体量子点阵列的商业化生产。***

9521729 Das Semiconductor quantum dots have novel optical and electronic properties that can lead to high speed photonic and electronic devices with superior performances. For room temperature applications, it is necessary to restrict the dimensions of such quantum dots to below 200 A so that the energy separation due to quantization is greater than the thermal broadening. Conventional nanofabrication techniques of using electron beam lithography and reactive ion techniques, where the semiconductor material is synthesized in the size and the shape of the nanostructure, are more appropriate for such devices. Current nanogrowth techniques suffer from the problem of large device size distribution and lack of device periodicity. This project proposes to develop a novel low cost nanogrowth technology for the fabrication of periodic arrays of semiconductor quantum dots on silicon with good device size uniformity. The technique utilizes material growth on a preformed template formed by electrochemical etching of aluminum on silicon. The template contains a periodic array of pores in which the semiconductor material is synthesized. The technique is inexpensive, reliable, suitable for the fabrication of a variety of semiconductors, VSL compatible and has the potential for integration of quantum dot services with silicon integrated circuits. The proposed technology is also suitable for large scale commercial production of semiconductor quantum dot arrays. ***